Abstract:The device electrical and transient current characteristics of the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) are comprehensively investigated according to the radio-frequency (RF) power during the sputter-deposition of IGZO active film. The RF power dependencies of the oxygen vacancy (V O ) concentration in IGZO and the surface morphology of IGZO film are analyzed through X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). According to the RF power change in the range of 100 ∼ 250 W, the optimal point in terms of threshold voltage (V T ), ON current (I on ), field-effect mobility in the linear region (μ FE_lin ), hysteresis voltage (V Hys ), and the V T shift under current stress (ΔV T ) is found to be 200 W. The existence of the optimal power condition originates from the RF-power dependencies of the electron carrier concentration, the density of electron traps in gate insulator (GI), and the interface trap density related to surface roughness. Furthermore, compared to the direct current (DC) current stress (CS) condition, it is found that when V GS rises rapidly, a total transient current ΔI D can be decomposed into three components, i.e., ΔI OS , ΔI BOOST , ΔI DEG . While ΔI OS is attributed to the non-quasi static Fermi-level rising, ΔI BOOST and ΔI DEG result from the donor creation in IGZO and the electron trapping into GI and interface. Noticeably, the occurrence level of each component changes sensitively according to RF power. Our result suggests that the 200 W device has the least overshoot of transient current and shows the best reliability in terms of deterioration due to transient current characteristics.

Comparative Study of A‐igzo TFTs with Direct Current and Radio Frequency Sputtered Channel Layers

Comparative Study of A-Igzo TFTs Deposited by RF and DC Sputtering

Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Electrical And Photosensitive Characteristics Of A-Igzo Tfts Related To Oxygen Vacancy

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

Reliability Analysis under Bias Stress and Elevated Temperature of Dual-Gate IGZO TFT

Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers