Abstract:The device electrical and transient current characteristics of the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) are comprehensively investigated according to the radio-frequency (RF) power during the sputter-deposition of IGZO active film. The RF power dependencies of the oxygen vacancy (V O ) concentration in IGZO and the surface morphology of IGZO film are analyzed through X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). According to the RF power change in the range of 100 ∼ 250 W, the optimal point in terms of threshold voltage (V T ), ON current (I on ), field-effect mobility in the linear region (μ FE_lin ), hysteresis voltage (V Hys ), and the V T shift under current stress (ΔV T ) is found to be 200 W. The existence of the optimal power condition originates from the RF-power dependencies of the electron carrier concentration, the density of electron traps in gate insulator (GI), and the interface trap density related to surface roughness. Furthermore, compared to the direct current (DC) current stress (CS) condition, it is found that when V GS rises rapidly, a total transient current ΔI D can be decomposed into three components, i.e., ΔI OS , ΔI BOOST , ΔI DEG . While ΔI OS is attributed to the non-quasi static Fermi-level rising, ΔI BOOST and ΔI DEG result from the donor creation in IGZO and the electron trapping into GI and interface. Noticeably, the occurrence level of each component changes sensitively according to RF power. Our result suggests that the 200 W device has the least overshoot of transient current and shows the best reliability in terms of deterioration due to transient current characteristics.

Comparative Study of A-Igzo TFTs Deposited by RF and DC Sputtering

Comparative Study of A‐igzo TFTs with Direct Current and Radio Frequency Sputtered Channel Layers

Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

Study Of Dc Sputtered Sno Growth And Its Applications In Thin Film Transistors

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Sputtering-Deposited Hafnium Oxide Dielectric for High-Performance InGaZnO Thin Film Transistors

A-Igzo TFTs with Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Effect of Source/ Drain Electrode Fabrication Technology on the Electrical Properties of Solution-processed A-IGZO Based Transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

P‐1.11: Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric

Analysis of Wet Etching Characteristics of A-Igzo Thin Film

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors