Abstract:We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness $t$ ranging from $\sim$5 to $\sim$53\,nm. Scanning electron microscopy and x-ray diffraction results indicate that the $t\lesssim 16.8$\,nm films are polycrystalline, while those $t\gtrsim 26.7$\,nm films are epitaxially grown along [100] direction. For the epitaxial films, the Altshuler and Aronov electron-electron interaction (EEI) effect governs the temperature behaviors of the sheet conductance $\sigma_\square$ at low temperatures, and the ratios of relative change of Hall coefficient $\Delta R_H/R_H$ to relative change of sheet resistance $\Delta R_\square/R_\square$ are $\approx$2, which is quantitatively consistent with Altshuler and Aronov EEI theory and seldom observed in other systems. For those polycrystalline films, both the sheet conductance and Hall coefficient vary linearly with logarithm of temperature below several tens Kelvin, which can be well described by the current EEI theories in granular metals. We extract the intergranular tunneling conductance of each film by comparing the $\sigma_\square(T)$ data with the predication of EEI theories in granular metals. It is found that when the tunneling conductance is less than the conductance of a single indium tin oxide (ITO) grain, the ITO film reveals granular metal characteristics in transport properties, conversely, the film shows transport properties of homogeneous disordered conductors. Our results indicate that electrical transport measurement can not only reveal the underlying charge transport properties of the film but also be a powerful tool to detect the subtle homogeneity of the film.

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Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

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Investigation of the Microstructure, Optical and Electrical Properties of In-Ga-Zn Oxide Thin Film Using the Sol-Gel Method

The granularity effect in amorphous InGaZnO$_4$ films prepared by rf sputtering method

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-flight Microwave Impedance Microscopy

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Dependence of Electrical and Optical Properties of IGZO Films on Oxygen Flow

Investigation on Physical Properties of IGZO Thin Films under the Conditions of Mixing Oxygen and Argon

Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

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Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

Crossover of electron-electron interaction effect in Sn-doped indium oxide films

Electrical And Photosensitive Characteristics Of A-Igzo Tfts Related To Oxygen Vacancy