Abstract:We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness $t$ ranging from $\sim$5 to $\sim$53\,nm. Scanning electron microscopy and x-ray diffraction results indicate that the $t\lesssim 16.8$\,nm films are polycrystalline, while those $t\gtrsim 26.7$\,nm films are epitaxially grown along [100] direction. For the epitaxial films, the Altshuler and Aronov electron-electron interaction (EEI) effect governs the temperature behaviors of the sheet conductance $\sigma_\square$ at low temperatures, and the ratios of relative change of Hall coefficient $\Delta R_H/R_H$ to relative change of sheet resistance $\Delta R_\square/R_\square$ are $\approx$2, which is quantitatively consistent with Altshuler and Aronov EEI theory and seldom observed in other systems. For those polycrystalline films, both the sheet conductance and Hall coefficient vary linearly with logarithm of temperature below several tens Kelvin, which can be well described by the current EEI theories in granular metals. We extract the intergranular tunneling conductance of each film by comparing the $\sigma_\square(T)$ data with the predication of EEI theories in granular metals. It is found that when the tunneling conductance is less than the conductance of a single indium tin oxide (ITO) grain, the ITO film reveals granular metal characteristics in transport properties, conversely, the film shows transport properties of homogeneous disordered conductors. Our results indicate that electrical transport measurement can not only reveal the underlying charge transport properties of the film but also be a powerful tool to detect the subtle homogeneity of the film.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to systematically study the structural and electrical transport properties of tin - doped indium oxide (ITO) films at different thicknesses, especially the influence of electron - electron interaction (EEI) effects on these properties. Specifically, the author focuses on the following aspects:
1. **Structural Features and Growth Modes**:
- Through scanning electron microscopy (SEM) and X - ray diffraction (XRD) techniques, the microstructure and crystal orientation of ITO films with different thicknesses were studied.
- It was found that films with a thickness less than about 16.8 nm have a polycrystalline structure, while films with a thickness greater than about 26.7 nm grow epitaxially in the [100] direction.
2. **Electrical Transport Properties**:
- The variation behaviors of the sheet resistance and Hall coefficient with temperature at low temperatures for ITO films with different thicknesses were studied.
- For epitaxially grown films, the electron - electron interaction theory proposed by Altshuler and Aronov can well describe the temperature dependence of their conductivity and Hall coefficient.
- For polycrystalline films, the current electron - electron interaction theory (taking into account granularity) can quantitatively explain the changes in their conductivity and Hall coefficient.
3. **Transition of Electron - Electron Interaction Effects**:
- By comparing the experimental data of films with different thicknesses, the transition from inter - granular electron - electron interaction to Altshuler - Aronov - type electron - electron interaction was observed.
- In particular, for films with a thickness less than 26.7 nm, the changes in their conductivity and Hall coefficient are mainly dominated by the inter - granular electron - electron interaction; while for films with a thickness greater than 26.7 nm, they are dominated by the Altshuler - Aronov effect.
4. **Detection of Homogeneity and Non - homogeneity**:
- By comparing the inter - granular tunneling conductance with the conductance of a single ITO granule, the homogeneity of the film was determined.
- The results show that electrical transport measurements can not only reveal the charge transport properties of the film, but also serve as a powerful tool for detecting subtle uniformity changes in the film.
### Formula Summary
- **Effect of Electron - Electron Interaction on Conductivity (Granular Metal)**:
\[
\sigma(T)=\sigma_0\left[1 - \frac{1}{2\pi g_T}\ln\left(\frac{g_T E_c}{k_B T}\right)\right]
\]
where $\sigma_0$ is the conductivity without the electron - electron interaction effect, $g_T = \frac{G_T}{2e^2/\hbar}$ is the dimensionless inter - granular tunneling conductance, $E_c$ is the charging energy, $k_B$ is the Boltzmann constant, and $T$ is the temperature.
- **Effect of Electron - Electron Interaction on Conductivity in Two - Dimensional Systems**:
\[
\Delta\sigma_\square(T)=\frac{e^2}{2\pi^2\hbar}\left(1 - \frac{3}{4}\tilde{F}\right)\ln\left(\frac{T}{T_0}\right)
\]
where $T_0$ is the reference temperature and $\tilde{F}$ is the electron screening factor.
- **Change in Hall Coefficient (Considering Virtual Electron Diffusion Effect)**:
\[
\Delta R_H = -\frac{c_d}{4\pi n^* e g_T}\ln\left(\frac{T_0}{T}\right)
\]
where $n^*$ is the effective carrier concentration and $c_d$ is the numerical lattice factor.
### Summary
This research, through systematic experimental and theoretical analyses, reveals the electrical transport properties at low temperatures and the transition of electron - electron interaction effects of ITO films with different thicknesses, providing an important basis for further understanding and optimizing the performance of transparent conductive oxide materials.