Interstitial doping of SnO 2 film with Li for indium-free transparent conductor

Xingqian Chen,Haozhen Li,Wei Chen,Zengxia Mei,Alexander Azarov,Andrej Kuznetsov,Xiaolong Du
DOI: https://doi.org/10.1088/0256-307x/41/3/037305
2024-03-12
Chinese Physics Letters
Abstract:The SnO 2 film exhibits significant potential as a cost-effective and high electron mobility substitute for In 2 O 3 films. In this study, Li is incorporated into the interstitial site of the SnO 2 lattice resulting in an exceptionally low resistivity of 2.028 × 10 -3 Ω·cm along with a high carrier concentration of 1.398 × 10 20 cm -3 and carrier mobility of 22.02 cm 2 /V·s. Intriguingly, Li i readily forms in amorphous structures but faces challenges in crystalline formations. Furthermore, it has been experimentally confirmed that Li i acts as a shallow donor in SnO 2 with an ionization energy ΔE D1 of -0.4 eV, indicating spontaneous occurrence of Li i ionization.
physics, multidisciplinary
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