IGZO thin films deposited by ultrasonic spray pyrolysis: effect of Zn precursor milling and In and Ga concentration

Balcazar, Luz M.,Olvera Amador, María de la Luz

DOI: https://doi.org/10.1007/s10854-024-12412-y

2024-04-24

Journal of Materials Science Materials in Electronics

Abstract:Codoped zinc oxide thin films with indium and gallium (IGZO) were deposited on soda-lime glass substrates by the ultrasonic chemical spray (USP) technique. The influence of the mechanical grinding process of Zn precursor (zinc acetate, AcZn) and the In and Ga concentrations was analyzed. The grinding process was carried out in a planetary ball mill, with a ball:/precursor ratio of 4:1, and a constant rotation speed of 300 RPM. The starting solutions were prepared at a molar concentration of 0.2 and variable In and Ga atomic concentration (1, 1.5, 2, 2.5 and 3 at%). The deposition conditions were kept constant, substrate temperature of 450 °C and deposition time of 7 min. Structural, morphological, optical, and electrical properties were analyzed. From the structural analysis a preferential orientation along the (101) plane for dominant In concentrated IGZO films was observed, whereas for dominant Ga concentrated was the (002) plane. The average optical transmission was in the range of 83–90%, confirming the high transparency of all the deposited films. The bandgap values, E g , showed slight variations, from 3.43 to 3.53 eV. The best electrical properties were obtained in the IGZO films with an In:Ga ratio of 1.5:1 [IGZO(1.5:1)], evaluated by the figure of merit, 3.50 × 10 –3 (Ω/□) −1 , calculated for an optical transmission of 86% and a sheet resistance of 63 Ω/□. According to the obtained results, the IGZO thin films deposited by the USP technique, are potentially applicable in the field of optoelectronics, mainly as transparent electrode.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied

What problem does this paper attempt to address?

This paper mainly discusses the preparation and property study of indium (In) and gallium (Ga) co-doped zinc oxide (IGZO) thin films. The study deposited IGZO thin films with different indium and gallium concentrations on soda-lime glass substrates using the ultrasonic spray pyrolysis (USP) method and analyzed the impact of the precursor mechanical grinding process on the film properties.

### Research Objectives

- **Investigate the effects of precursor grinding process and variations in indium and gallium concentrations on the film's structure, morphology, optical, and electrical properties**: By mechanically grinding the zinc oxide precursor (zinc acetate) and altering the doping ratios of indium and gallium, the study aims to understand how these factors influence the performance of IGZO thin films.

- **Optimize the comprehensive performance of IGZO thin films**: The goal is to obtain IGZO thin film materials with excellent optical transparency and conductivity by adjusting the film preparation conditions, making them suitable for various optoelectronic applications, such as transparent electrodes.

### Main Findings

- **Structural Analysis**: With the increase in indium concentration, the preferred orientation of the films shifts from the (101) plane to the (002) plane; with the increase in gallium concentration, the films tend to grow on the (002) plane.

- **Optical Properties**: The average optical transmittance of all deposited films ranges between 83%-90%, showing high transparency.

- **Electrical Properties**: The best electrical performance is observed in IGZO films with an indium to gallium ratio of 1.5:1, with a figure of merit of 3.50×10^(-3) (Ω/□)^(-1), corresponding to 86% optical transmittance and a sheet resistance of 63 Ω/□.

- **Application Prospects**: Based on the above results, IGZO films deposited using the USP technique have potential application value in the optoelectronics field, especially as transparent electrode materials.

In summary, this study aims to optimize the comprehensive performance of IGZO thin films by regulating the doping concentrations of indium and gallium and the precursor treatment methods, with the expectation of achieving high-performance applications in optoelectronic devices.