Solution-processed Ternary P-Type CuCrO2 Semiconductor Thin Films and Their Application in Transistors

Shengbin Nie,Ao Liu,You Meng,Byoungchul Shin,Guoxia Liu,Fukai Shan

DOI: https://doi.org/10.1039/c7tc04810f

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

What problem does this paper attempt to address?

Solution Combustion Synthesis: Low-Temperature Processing for P-Type Cu:Nio Thin Films for Transparent Electronics

Ao Liu,Huihui Zhu,Zidong Guo,You Meng,Guoxia Liu,Elvira Fortunato,Rodrigo Martins,Fukai Shan

DOI: https://doi.org/10.1002/adma.201701599

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Low-temperature solution processing opens a new window for the fabrication of oxide semiconductors due to its simple, low cost, and large-area uniformity. Herein, by using solution combustion synthesis (SCS), p-type Cu-doped NiO (Cu:NiO) thin films are fabricated at a temperature lower than 150 °C. The light doping of Cu substitutes the Ni site and disperses the valence band of the NiO matrix, leading to an enhanced p-type conductivity. Their integration into thin-film transistors (TFTs) demonstrates typical p-type semiconducting behavior. The optimized Cu5% NiO TFT exhibits outstanding electrical performance with a hole mobility of 1.5 cm2 V-1 s-1 , a large on/off current ratio of ≈104 , and clear switching characteristics under dynamic measurements. The employment of a high-k ZrO2 gate dielectric enables a low operating voltage (≤2 V) of the TFTs, which is critical for portable and battery-driven devices. The construction of a light-emitting-diode driving circuit demonstrates the high current control capability of the resultant TFTs. The achievement of the low-temperature-processed Cu:NiO thin films via SCS not only provides a feasible approach for low-cost flexible p-type oxide electronics but also represents a significant step toward the development of complementary metal-oxide semiconductor circuits.
P‐17: Low‐Temperature, Solution‐Processed Inorganic P‐channel Cu‐based Thin‐Film Transistors and Circuits

Ao Liu,Huihui Zhu,Yong-Young Noh

DOI: https://doi.org/10.1002/sdtp.14140

2020-01-01

Abstract:Developing p‐type transparent semiconductors has attracted great interest over the past decades to realize complementary p‐n junction devices and circuits by cost effective graphic art processes. Here we report two kinds of transparent p‐type Cu‐based transistors (CuI and CuxO), which can be synthesized using solution process at plastic‐compatible temperatures.
Preparation and Characterization of Solution-Processed Nanocrystalline p -Type CuAlO 2 Thin-Film Transistors

Shuang Li,Xinan Zhang,Penglin Zhang,Xianwen Sun,Haiwu Zheng,Weifeng Zhang

DOI: https://doi.org/10.1186/s11671-018-2680-5

2018-01-01

Nanoscale Research Letters

Abstract:The development of p -type metal oxide thin-film transistors (TFTs) is far behind the n -type counterparts. Here, p -type CuAlO 2 thin films were deposited by spin coating and annealed in nitrogen atmosphere at different temperature. The effect of post-annealing temperature on the microstructure, chemical compositions, morphology, and optical properties of the thin films was investigated systematically. The phase conversion from a mixture of CuAl 2 O 4 and CuO to nanocrystalline CuAlO 2 was achieved when annealing temperature was higher than 900 °C, as well as the transmittance, optical energy band gap, grain size, and surface roughness of the films increase with the increase of annealing temperature. Next, bottom-gate p -type TFTs with CuAlO 2 channel layer were fabricated on SiO 2 /Si substrate. It was found that the TFT performance was strongly dependent on the physical properties and the chemical composition of channel layer. The optimized nanocrystalline CuAlO 2 TFT exhibits a threshold voltage of − 1.3 V, a mobility of ~ 0.1 cm 2 V −1 s −1 , and a current on/off ratio of ~ 10 3 . This report on solution-processed p -type CuAlO 2 TFTs represents a significant progress towards low-cost complementary metal oxide semiconductor logic circuits.
High-performance P-Channel Transistors with Transparent Zn Doped-Cui

Ao Liu,Huihui Zhu,Won-Tae Park,Se-Jun Kim,Hyungjun Kim,Myung-Gil Kim,Yong-Young Noh

DOI: https://doi.org/10.1038/s41467-020-18006-6

IF: 16.6

2020-01-01

Nature Communications

Abstract:‘Ideal’ transparent p -type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. In this study, we propose a doping approach through soft chemical solution process and transparent p -type Zn-doped CuI semiconductor for high-performance TFTs and circuits. The optimised TFTs annealed at 80 °C exhibit a high hole mobility of over 5 cm 2 V −1 s −1 and high on/off current ratio of ~10 7 with good operational stability and reproducibility. The CuI:Zn semiconductors show intrinsic advantages for next-generation TFT applications and wider applications in optoelectronics and energy conversion/storage devices. This study paves the way for the realisation of transparent, flexible, and large-area integrated circuits combined with n -type metal-oxide semiconductor.
In Situ One-Step Synthesis of P-Type Copper Oxide for Low-Temperature, Solution-Processed Thin-Film Transistors

Ao Liu,Shengbin Nie,Guoxia Liu,Huihui Zhu,Chundan Zhu,Byoungchul Shin,Elvira Fortunato,Rodrigo Martins,Fukai Shan

DOI: https://doi.org/10.1039/c7tc00574a

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:Solution-processed p-type Cu2O thin films were fabricatedvia in-situreaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.
Solution-Processed P-Type Copper Oxide Thin-Film Transistors Fabricated by Using A One-Step Vacuum Annealing Technique

Jianmin Yu,Guoxia Liu,Ao Liu,You Meng,Byoungchul Shin,Fukai Shan

DOI: https://doi.org/10.1039/c5tc02384j

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:High-performance p-type CuxO TFTs were fabricated by a solution process and annealed at various temperatures under vacuum.
Transparent Electronics: Room‐Temperature Solution‐Synthesized P‐type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics (adv. Mater. 34/2018)

Ao Liu,Huihui Zhu,Won‐Tae Park,Seok‐Ju Kang,Yong Xu,Myung‐Gil Kim,Yong‐Young Noh

DOI: https://doi.org/10.1002/adma.201870258

IF: 29.4

2018-01-01

Advanced Materials

Abstract:In article number 1802379, Yong Xu, Myung-Gil Kim, Yong-Young Noh, and co-workers develop room-temperature solution-processed, high-performance, solution-processible, and reliable copper iodide (CuI) thin-film transistors (TFTs). These p-type CuI TFTs with a ZrO2 dielectric show impressively high field-effect mobility of 1.93 cm2 V−1 s−1 at a low operating voltage of 5 V. Transparent complementary inverters composed of the p-type CuI and n-type IGZO TFTs are demonstrated with clear inverting characteristics and voltage gain of >4.
Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films

Anran Song,Kashif Javaid,Yu Liang,Weihua Wu,Jingjing Yu,Lingyan Liang,Hongliang Zhang,Linfeng Lan,Chang,Hongtao Cao

DOI: https://doi.org/10.1002/pssr.201800034

2018-01-01

Abstract:Concerning the revolutionary future of electronic devices, high‐performance solution‐processable semiconductors have earned increasing academic and industrial research interests. In this paper, we synthesize In‐Ga‐Cd‐O semiconductor thin films via a solution method. Transparent amorphous/nanocrystalline oxide thin films with small surface roughness have been grown by controlling the relative ratio of Cd‐content. The present thin‐film transistor with an optimized Cd‐ratio exhibits a saturation field‐effect mobility up to 10 cm2 V−1 s−1, an on/off current ratio of ≈1.3 × 109, and a threshold voltage shift of ≈2.6 V under −5 V gate bias of 10 000 s, which are superior or comparable to those reported values of solution‐processed conventional In‐Ga‐Zn‐O counterparts. Our results indicate that the proposed In‐Ga‐Cd‐O semiconductor would endow a promising transparent amorphous/nanocrystalline active material for electronic devices.
Solution-processed Inorganic P-Channel Transistors: Recent Advances and Perspectives

Ao Liu,Huihui Zhu,Yong-Young Noh

DOI: https://doi.org/10.1016/j.mser.2018.11.001

IF: 33.667

2018-01-01

Materials Science and Engineering R Reports

Abstract:For decades, inorganic n-type metal-oxide semiconductors have attracted great interest across a wide range of applications due to their excellent electrical property, low cost, high optical transparency, and good ambient stability. The next attention has focused on the development of high-performance p-type semiconductors with comparable opto/electric properties to n-type counterparts. This paper provides a comprehensive overview of recent progress in solution-processed inorganic p-type semiconductors that can be applied as channel layers in thin-film transistors and complementary metal-oxide semiconductor-based integrated circuits. We first introduce conventional p-type oxide semiconductors and review their achievements on related devices. Then, we pay a specific focus on emerging (pseudo)halide materials for realization of transparent, low-temperature and high-performance printable electronics and circuits.
Solution-processed zinc oxide thin films and top-gate thin film transistors

WANG Xiao-Yan,DONG Gui-Fang,Juan Qiao,WANG Li-Duo,Yong Qiu

2009-01-01

Chinese journal of inorganic chemistry

Abstract:ZnO thin films were prepared by spin-coating the precursor solution with different concentrations. The morphologies and crystallinity of the ZnO films were characterized by Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD). Multilayer ZnO films were employed as active layers to prepare thin film transistors (TFTs), and patterned indium tin oxide (ITO) was used as source and drain electrodes. The device based on the three-layer ZnO films, prepared with the precursor concentration order of 0.25, 0.10 and 0.05 mol.L-1, showed higher mobility of 7.1 x 10(-3) cm(2).V-1.s(-1) than the device with the precursor concentration order of 0.05, 0.10 and 0.25 mol.L-1 (5.2 x 10(-3) cm(2).V-1.s(-1)). The difference of the performance of TFTs based on these two kinds of films Is attributed to the roughness of the multilayer ZnO thin films. Smooth film is useful for forming excellent semiconductor/insulator interface, resulting in high mobility.
8‐4: Invited Paper: Transparent Zn Doped‐CuI for High‐Performance P‐channel Thin Film Transistors

Ao Liu,Huihui Zhu,Yong-Young Noh

DOI: https://doi.org/10.1002/sdtp.14617

2021-01-01

Abstract:Over the past decades, developing high‐performance transparent p‐type semiconductors has become one of the urgent tasks in electronic industry for the integration of complementary circuits and high‐end displays. Unfortunately, there is no satisfied candidate reported to date. In this work, we reported a novel transparent p‐type Zn‐doped CuI semiconductor using low‐temperature and low‐cost solution process for high‐performance transistors and circuits. The optimized transistors exhibited a high hole mobility of 5 cm2 V−1 s−1 and high on/off current ratio of ~107 with excellent operational stability and reproducibility. The integrated CMOS inverter delivered a high peak gain of ~60 with the low power consumption. This study paves the way for realizing transparent, flexible, and large‐area integrated circuits with n‐type metal‐oxide semiconductors.
Combustion Synthesis of P-Type Transparent Conducting CuCrO2+x and Cu:CrOx Thin Films at 180 °C.

Jian Wang,Trey B. Daunis,Lanxia Cheng,Bo Zhang,Jiyoung Kim,Julia W. P. Hsu

DOI: https://doi.org/10.1021/acsami.7b13680

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Low-temperature solution processing of p-type transparent conducting oxides (TCOs) will open up new opportunities for applications on flexible substrates that utilize low-cost, large-area manufacturing. Here, we report a facile solution synthesis method that produces two p-type TCO thin films: copper chromium oxide and copper-doped chromium oxide. Using combustion chemistry, both films are solution processed at 180 °C, which is lower than most recent efforts. While adopting the same precursor preparation and annealing temperature, we find that annealing environment (solvent vapor vs open air) dictates the resulting film phase, hence the optoelectronic properties. The effect of annealing environment on the reaction mechanism is discussed. We further characterize the electronic, optical, and transport properties of the two materials, and compare the differences. Their applications in optoelectronic devices are successfully demonstrated in transparent p-n junction diodes and as hole transport layers in organic photovoltaic devices.
Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Xiao-Yan WANG,Gui-Fang DONG,Juan QIAO,Li-Duo WANG,Yong QIU

DOI: https://doi.org/10.3321/j.issn:1001-4861.2009.12.001

2009-01-01

Abstract:morphologies and crystallinity of the ZnO tMms were characterized by Atomic Force Microscopy(AFM)and X-ray Diffraction (XRD).Multilayer ZnO films were employed as active layers to prepare thin film transistors (TFTs),and patterned indium tin oxide(ITO) Wag used as source and drain electrodes.The device based on the threelayer ZnO films,prepared with the precursor concentration order of 0.25,0.10 and O.05 mol·L~(-1),showed higher mobility of 7.1×10~(-3)cm~2·V~(-1)·s~(-1)than the device wiith the precursor concentration order of 0.05,0.10 and 0.25mol·L~-(1)(5.2×10~(-3)cm~2·V~(-1)·s~(-1).The difference of the performance of TFTs based on these two kinds of films is attributed to the roushiness of the multilayer ZnO thin films.Smooth film is useful for forming excellent semiconductor/insulator interface,resulting in high mobility.
Study of zinc tin oxide thin-film transistor

Xiong Wang,Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Qiu Dong-Jiang,Wu Hui-Zhen

DOI: https://doi.org/10.7498/aps.60.037305

2011-01-01

Abstract:Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO 2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm 2/V · s, threshold voltage of -2 V, and current on/off ratio of 10 4. © 2011 Chinese Physical Society.
Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

Xiaohan Cheng,Bojing Lu,Jianguo Lu,Siqin Li,Rongkai Lu,Shilu Yue,Lingxiang Chen,Zhizhen Ye

DOI: https://doi.org/10.1109/ted.2020.2986489

IF: 3.1

2020-01-01

IEEE Transactions on Electron Devices

Abstract:In this article, we have developed an amorphous CuNiSnO (a-CNTO), which is a p-type amorphous oxide semiconductor (AOS). The a-CNTO thin films were deposited by the pulsed laser deposition method, having high amorphous quality with a rather smooth surface. The a-CNTOfilms grown at 100 degrees C exhibited the smoothest surface (root-mean-square roughness of 0.25 nm), highest visible transparency (similar to 85%), and most favorable p-type conductivity (hole concentration of similar to 10(15) cm(-3)), which are very suitable for electronic device fabrication. Thus, the obtained p-type a-CNTO thin-film transistors (TFTs) have an ON-to-OFF current ratio of similar to 1.2 x 10(5), the threshold voltage of -2.3 V, the field-effect mobility of 1.37 cm(2)/Vs, and subthreshold swing of 0.70 V/decade. As a new kind of p-type AOS, the achievement of the p-type a-CNTO TFTs and the low-temperature processesmay open the door for practical applications in transparent and flexible electronics.
Key Roles of Trace Oxygen Treatment for High‐Performance Zn‐Doped CuI P‐channel Transistors

Ao Liu,Huihui Zhu,Kyu In Shim,Jisu Hong,Haksoon Jung,Jeong Woo Han,Yong-Young Noh

DOI: https://doi.org/10.1002/aelm.202000933

IF: 6.2

2020-01-01

Advanced Electronic Materials

Abstract:The development of transparent and high‐performance p‐type semiconductors as a counterpart of n‐type metal oxide semiconductors has attracted significant interest for the integration of complementary circuits and p–n junction devices. This study investigates the effect of trace O2 for high‐performance and solution‐processed inorganic p‐channel Zn‐doped copper iodide (CuI) thin‐film transistors (TFTs) via a combined computation–experiment approach. The absorbed O2 molecules in the CuI film can occupy iodine vacancies, acting as trap passivator. Meanwhile, the strong electronegativity of O2 enables electron capture from the CuI matrix, leading to p‐doping. Trace O2‐treated Zn‐doped CuI TFTs exhibit significantly improved electrical performance compared to untreated devices. Optimized TFTs exhibit a high field‐effect hole mobility of 4.4 cm2 V−1 s−1, high on/off current ratio of ≈107, and small hysteresis. These findings provide a clear basis for realizing reproducible and high‐performance metal‐halide (e.g., CuI and perovskite) optoelectronic devices using low‐cost solution process.
High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Fukai Shan,Ao Liu,Huihui Zhu,Weijin Kong,Jingquan Liu,Byoung-Chul Shin,Elvira Fortunato,Rodrigo Martins,Guoxia Liu

DOI: https://doi.org/10.1039/c6tc02137a

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:Although there are a few research studies on solution-processed p-channel oxide thin-film transistors (TFTs), the strict fabrication conditions and the poor electrical properties have limited their applications in low-power complementary metal oxide semiconductor (CMOS) electronics. Here, the application of the polyol reduction method for processing p-type CuxO and NiOx channel layers and their implementation in TFT devices are reported. The optimized CuxO and NiOx TFTs were achieved at low annealing temperatures (similar to 300 degrees C) and exhibited decent electrical properties. Encouraged by the inspiring results obtained on SiO2/Si substrates, the TFT performance was further optimized by device engineering, employing high-k AlOx as the gate dielectric. The fully solution-processed NiOx/AlOx TFT could be operated at a low voltage of 3.5 V and exhibits a high hole mobility of around 25 cm(2) V-1 s(-1). Our work demonstrates the ability to grow high-quality p-type oxide films and devices via the polyol reduction method over large area substrates while at the same time it provides guidelines for further p-type oxide material and device improvements.
Amorphous copper iodide: a p-type semiconductor for solution processed p-channel thin-film transistors and inverters

Han Ju Lee,Seonjeong Lee,Keun Hyung Lee,Kihyon Hong

DOI: https://doi.org/10.1039/d2tc00410k

IF: 6.4

2022-05-18

Journal of Materials Chemistry C

Abstract:Until now, inorganic p-channel thin-film transistors (TFTs) have shown relatively low performance in terms of mobility, ON-current level, and on/off ratio compared to their n-channel counterparts. For inorganic p-channel TFTs, high-temperature annealed single- or poly-crystalline materials such as CuO, SnO, or 2D dichalcogenides have been the typical materials of choice. Development of amorphous semiconductor materials can provide a wide range of promising semiconductors for the TFT industry owing to their unique advantages, such as large area applicability, high device-to-device uniformity, and low temperature processing; however, the poor TFT performance using the conventional amorphous p-type semiconductors limits the use of materials in practical applications. In the present work, we demonstrate the 1st high-performance solution-processed p-channel TFT using an amorphous copper iodide (a-CuI) semiconductor, which outperforms its polycrystalline counterpart. Amorphous CuI films were formed by spin coating of precursor solutions based on co-solvents. By using a-CuI semiconductors as the channel layer, electrolyte-gated p-channel TFTs were fabricated with a vertical device structure. Measurement of the TFT characteristics reveals that the amorphous CuI channel layer leads to better device performance than devices with a polycrystalline CuI. The optimized vertical TFTs showed high current densities above 1000 mA cm −2 , ON/OFF current ratios of > 10 4 , and large normalized transconductances of about 6 S m −1 , which are the highest among solution-processed vertical TFTs. These results pave the way for application of amorphous p-type inorganics in high-performance complementary circuits and represent a breakthrough for p-type semiconductor materials.

materials science, multidisciplinary,physics, applied
High‐Performance and Low‐Power Polycrystalline MoTe 2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

Yuan Liu,Xiaokun Wen,Wenyu Lei,Li Yang,Pengzhen Zhang,Yuhui Zhang,Haixin Chang,Wenfeng Zhang

DOI: https://doi.org/10.1002/admi.202101863

IF: 5.4

2022-03-07

Advanced Materials Interfaces

Abstract:Advanced Materials Interfaces, EarlyView.

materials science, multidisciplinary,chemistry
High-Performance p-Type Transparent Conducting CuI−Cu2O Thin Films with Enhanced Hole Mobility, Surface, and Stability

Ruibin Xue,Gang Gao,Lei Yang,Liangge Xu,Yumin Zhang,Jiaqi Zhu

DOI: https://doi.org/10.1039/d3tc02422a

IF: 6.4

2023-09-21

Journal of Materials Chemistry C

Abstract:Low temperature preparable p-type transparent conductors are indispensable for flexible transparent electronics. The current research interest in p-type transparent conductors is mainly focused on wide-band gap copper-based oxides. However, the performance of these oxides is generally inferior to their n-type counterparts, and their high preparation temperature is unfavorable for flexible electronic applications. CuI is a p-type transparent conductor that can be prepared at low temperatures and possesses properties comparable to n-type transparent conductors. The commonly used method for preparing CuI films is iodination of Cu films. However, CuI films produced by this method have a frosted-glass-like appearance, the electrical properties are difficult to be regulated, thus is not suitable for electronic devices. In this paper, we have successfully developed CuI−Cu 2 O composite films with enhanced surface morphology and electronic properties at room temperature. Cu 2 O inhibits the movement of CuI grain boundaries during the iodination process, resulting in a reduction of CuI grain size and a polycrystalline organization with a smoother surface. Due to the increased concentration of grain boundaries in the films and the charge redistribution between Cu 2 O and CuI, the hole concentration in the films decreases and the hole mobility increases. The conductivity of the films increases and then decreases as the Cu 2 O content rises. For CuI−Cu 2 O films with optimized Cu 2 O composition, the transparency in the visible region is 70-80%, the hole concentration is 6.16×1018 cm -3 , the hole mobility is 25.40 cm 2 V -1 s -1 , and the conductivity is 18.57 S cm -1 . After 6 months of aging, the electrical properties of CuI−Cu 2 O films are more stable than those of pure CuI films. These findings will accelerate the wide application of CuI films in transparent electronics.

materials science, multidisciplinary,physics, applied

Solution-processed Ternary P-Type CuCrO2 Semiconductor Thin Films and Their Application in Transistors

Solution Combustion Synthesis: Low-Temperature Processing for P-Type Cu:Nio Thin Films for Transparent Electronics

P‐17: Low‐Temperature, Solution‐Processed Inorganic P‐channel Cu‐based Thin‐Film Transistors and Circuits

Preparation and Characterization of Solution-Processed Nanocrystalline p -Type CuAlO 2 Thin-Film Transistors

High-performance P-Channel Transistors with Transparent Zn Doped-Cui

In Situ One-Step Synthesis of P-Type Copper Oxide for Low-Temperature, Solution-Processed Thin-Film Transistors

Solution-Processed P-Type Copper Oxide Thin-Film Transistors Fabricated by Using A One-Step Vacuum Annealing Technique

Transparent Electronics: Room‐Temperature Solution‐Synthesized P‐type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics (adv. Mater. 34/2018)

Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films

Solution-processed Inorganic P-Channel Transistors: Recent Advances and Perspectives

Solution-processed zinc oxide thin films and top-gate thin film transistors

8‐4: Invited Paper: Transparent Zn Doped‐CuI for High‐Performance P‐channel Thin Film Transistors

Combustion Synthesis of P-Type Transparent Conducting CuCrO2+x and Cu:CrOx Thin Films at 180 °C.

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Study of zinc tin oxide thin-film transistor

Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

Key Roles of Trace Oxygen Treatment for High‐Performance Zn‐Doped CuI P‐channel Transistors

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Amorphous copper iodide: a p-type semiconductor for solution processed p-channel thin-film transistors and inverters

High‐Performance and Low‐Power Polycrystalline MoTe 2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

High-Performance p-Type Transparent Conducting CuI−Cu2O Thin Films with Enhanced Hole Mobility, Surface, and Stability