Abstract:Low temperature preparable p-type transparent conductors are indispensable for flexible transparent electronics. The current research interest in p-type transparent conductors is mainly focused on wide-band gap copper-based oxides. However, the performance of these oxides is generally inferior to their n-type counterparts, and their high preparation temperature is unfavorable for flexible electronic applications. CuI is a p-type transparent conductor that can be prepared at low temperatures and possesses properties comparable to n-type transparent conductors. The commonly used method for preparing CuI films is iodination of Cu films. However, CuI films produced by this method have a frosted-glass-like appearance, the electrical properties are difficult to be regulated, thus is not suitable for electronic devices. In this paper, we have successfully developed CuI−Cu 2 O composite films with enhanced surface morphology and electronic properties at room temperature. Cu 2 O inhibits the movement of CuI grain boundaries during the iodination process, resulting in a reduction of CuI grain size and a polycrystalline organization with a smoother surface. Due to the increased concentration of grain boundaries in the films and the charge redistribution between Cu 2 O and CuI, the hole concentration in the films decreases and the hole mobility increases. The conductivity of the films increases and then decreases as the Cu 2 O content rises. For CuI−Cu 2 O films with optimized Cu 2 O composition, the transparency in the visible region is 70-80%, the hole concentration is 6.16×1018 cm -3 , the hole mobility is 25.40 cm 2 V -1 s -1 , and the conductivity is 18.57 S cm -1 . After 6 months of aging, the electrical properties of CuI−Cu 2 O films are more stable than those of pure CuI films. These findings will accelerate the wide application of CuI films in transparent electronics.

P‐17: Low‐Temperature, Solution‐Processed Inorganic P‐channel Cu‐based Thin‐Film Transistors and Circuits

8‐4: Invited Paper: Transparent Zn Doped‐CuI for High‐Performance P‐channel Thin Film Transistors

High-performance P-Channel Transistors with Transparent Zn Doped-Cui

Solution-processed Inorganic P-Channel Transistors: Recent Advances and Perspectives

Solution Combustion Synthesis: Low-Temperature Processing for P-Type Cu:Nio Thin Films for Transparent Electronics

High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters

Transparent Electronics: Room‐Temperature Solution‐Synthesized P‐type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics (adv. Mater. 34/2018)

In Situ One-Step Synthesis of P-Type Copper Oxide for Low-Temperature, Solution-Processed Thin-Film Transistors

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

Solution-processed Ternary P-Type CuCrO2 Semiconductor Thin Films and Their Application in Transistors

Amorphous copper iodide: a p-type semiconductor for solution processed p-channel thin-film transistors and inverters

Key Roles of Trace Oxygen Treatment for High‐Performance Zn‐Doped CuI P‐channel Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Preparation and Characterization of Solution-Processed Nanocrystalline p -Type CuAlO 2 Thin-Film Transistors

High-Performance p-Type Transparent Conducting CuI−Cu2O Thin Films with Enhanced Hole Mobility, Surface, and Stability

Transparent Inorganic Copper Bromide (cubr) P-Channel Transistors Synthesized from Solution at Room Temperature

Ultrathin transparent Copper(I) oxide films grown by plasma-enhanced atomic layer deposition for Back-end-of-line p-Type transistors

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Solution-Processed P-Type Copper Oxide Thin-Film Transistors Fabricated by Using A One-Step Vacuum Annealing Technique

Low-voltage solution-processed Cuprous thiocyanate Thin-Film transistors with NAND logic function