Abstract:The proliferation of place-and-forget devices driven by the exponentially-growing Internet of Things industry has created a demand for low-voltage thin-film transistor (TFT) electronics based on solution-processible semiconductors. Amongst solution-processible technologies, TFTs based on semiconducting single-walled carbon nanotubes (sc-SWCNTs) are a promising candidate owing to their comparatively high current driving capability in their above-threshold region at low voltages, which is desirable for applications with constraints on supply voltage and switching speed. Low-voltage above-threshold operation in sc-SWCNTs is customarily achieved by using high-capacitance-density gate dielectrics such as metal-oxides fabricated via atomic layer deposition (ALD) and ion-gels. These are unattractive, as ALD requires complex-processing or exotic precursors, while ion-gels lead to slower devices with poor stability. This work demonstrates the fabrication of low-voltage above-threshold sc-SWCNTs TFTs based on a high-capacitance-density hybrid nanodielectric, which is composed of a readily-made AlO (x) nanolayer and a solution-processed self-assembled monolayer (SAM). The resultant TFTs can withstand a gate-channel voltage of 1-2 V, which ensures their above-threshold operation with balanced ambipolar behavior and electron/hole mobilities of 7 cm(2) V-1 s(-1). Key to achieving balanced ambipolarity is the mitigation of environmental factors via the encapsulation of the devices with an optimized spin-on polymer coating, which preserves the inherent properties of the sc-SWCNTs. Such balanced ambipolarity enables the direct implementation of CMOS-like circuit configurations without the use of additional dopants, semiconductors or source/drain electrode metals. The resultant CMOS-like inverters operate in the above-threshold region with supply voltages in the 1-2 V range, and have positive noise margins, gain values surpassing 80 V/V, and a bandwidth exceeding 100 kHz. This reinforces SAM-based nanodielectrics as an attractive route to easy-to-fabricate sc-SWCNT TFTs that can operate in the above-threshold region and that can meet the demand for low-voltage TFT electronics requiring moderate speeds and higher driving currents for wearables and sensing applications.

Low-voltage solution-processed Cuprous thiocyanate Thin-Film transistors with NAND logic function

Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function

Low-voltage solution-processed P-type Mg-doped CuI thin film transistors with NAND logic function

High-Performance Inorganically Connected CuInSe2 Nanocrystal Thin-Film Transistors and Integrated Circuits Based on the Solution Process of Colloidal Synthesis, Ligand Exchange, and Surface Treatment

Low-voltage solution-processed NaxCu1 − xI thin-film transistors for mimicking synaptic plasticity

Ambipolar Carbon Nanotube Transistors with Hybrid Nanodielectric for Low-Voltage CMOS-like Electronics

Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3 -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics

Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin‐Film Transistors for Low Voltage Flexible Logic Circuits

High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters

Chitosan-Based Electrolyte Gated Low Voltage Oxide Transistor With a Coplanar Modulatory Terminal

Transparent Electronics: Room‐Temperature Solution‐Synthesized P‐type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics (adv. Mater. 34/2018)

P‐17: Low‐Temperature, Solution‐Processed Inorganic P‐channel Cu‐based Thin‐Film Transistors and Circuits

Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate

Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

Sputter-Deposited copper iodide thin film transistors with low Operating voltage

Solution Combustion Synthesis: Low-Temperature Processing for P-Type Cu:Nio Thin Films for Transparent Electronics

Transparent All-Carbon-Nanotube Thin-film Transistors

Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage

Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates

Flexible Printed Three Dimensional (3D) Integrated Carbon Nanotube Complementary Metal Oxide Semiconductor (CMOS) Thin Film Transistors and Circuits