8‐4: Invited Paper: Transparent Zn Doped‐CuI for High‐Performance P‐channel Thin Film Transistors

Ao Liu,Huihui Zhu,Yong-Young Noh

DOI: https://doi.org/10.1002/sdtp.14617

2021-01-01

Abstract:Over the past decades, developing high‐performance transparent p‐type semiconductors has become one of the urgent tasks in electronic industry for the integration of complementary circuits and high‐end displays. Unfortunately, there is no satisfied candidate reported to date. In this work, we reported a novel transparent p‐type Zn‐doped CuI semiconductor using low‐temperature and low‐cost solution process for high‐performance transistors and circuits. The optimized transistors exhibited a high hole mobility of 5 cm2 V−1 s−1 and high on/off current ratio of ~107 with excellent operational stability and reproducibility. The integrated CMOS inverter delivered a high peak gain of ~60 with the low power consumption. This study paves the way for realizing transparent, flexible, and large‐area integrated circuits with n‐type metal‐oxide semiconductors.