Abstract:Electronic devices composed of semiconducting two-dimensional (2D) materials and ultrathin 2D metallic electrode materials, accompanying synergistic interactions and extraordinary properties, are becoming highly promising for future flexible and transparent electronic and optoelectronic device applications. Unlike devices with bulk metal electrode and 2D channel materials, devices with ultrathin 2D electrode and 2D channel are susceptible to chemical reactions in both channel and electrode surface due to the high surface to volume ratio of the 2D structures. However, so far, the effect of doping was primary concerned on the channel component, and there is lack of understanding in terms of how to modulate electrical properties of devices by engineering electrical properties of both the metallic electrode and the semiconducting channel. Here, we propose the novel, one-pot doping of the field-effect transistor (FET) based on 2D molybdenum disulfide (MoS2) channel and ultrathin copper sulfide (CuS) electrodes under mild iodine gas environment at room temperature, which simultaneously modulates electrical properties of the 2D MoS2channel and 2D CuS electrode in a facile and cost-effective way. After one-pot iodine doping, effective p-type doping of the channel and electrode was observed, which was shown through decreased off current level, improvedIon/Ioffratio and subthreshold swing value. Our results open up possibility for effectively and conveniently modulating electrical properties of FETs made of various 2D semiconductors and ultrathin contact materials without causing any detrimental damage.

Molecule Charge Transfer Doping for p‐Channel Solution‐Processed Copper Oxide Transistors

P‐doping Methods: Molecule Charge Transfer Doping for P‐channel Solution‐Processed Copper Oxide Transistors (adv. Funct. Mater. 24/2020)

High-performance P-Channel Transistors with Transparent Zn Doped-Cui

Key Roles of Trace Oxygen Treatment for High‐Performance Zn‐Doped CuI P‐channel Transistors

Enhanced performance in doped micro-nano porous organic thin-film transistors

8‐4: Invited Paper: Transparent Zn Doped‐CuI for High‐Performance P‐channel Thin Film Transistors

Enhanced Performance of P-Channel CuIBr Thin-Film Transistor by ITO Surface Charge-Transfer Doping

Overall Enhancement of Electrical Properties of Indium Oxide Thin-Film Transistors by Surface Doping

Solution Combustion Synthesis: Low-Temperature Processing for P-Type Cu:Nio Thin Films for Transparent Electronics

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

P‐17: Low‐Temperature, Solution‐Processed Inorganic P‐channel Cu‐based Thin‐Film Transistors and Circuits

Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers

Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors

Metal Oxide Transistors Via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport

Transparent Electronics: Room‐Temperature Solution‐Synthesized P‐type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics (adv. Mater. 34/2018)

Carrier Modulation and Effective Passivation of Tin Oxide Thin-Film Transistors by Organic Surface Doping

Facile one-pot iodine gas phase doping on 2D MoS2/CuS FET at room temperature

High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters

Facile P-Doping of Few-Layer MoTe2 by Controllable Surface Oxidation Toward High-Performance Complementary Devices

Doping Versatile N-Type Organic Semiconductors Via Room Temperature Solution-Processable Anionic Dopants

Manipulating Doping of Organic Semiconductors by Reactive Oxygen for Field-Effect Transistors