Abstract:Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.

Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors

Solution-based SnGaO thin-film transistors for Zn- and In-free oxide electronic devices

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors

High-performance fully transparent Ti-Zn-O thin film transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Solution-processed zinc oxide thin films and top-gate thin film transistors

Liquid Ga–In–Sn Alloy Printing of GaInSnO Ultrathin Semiconductor Films and Controllable Performance Field Effect Transistors

High-mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-Κ Alumina Dielectric Working in Enhancement Mode.

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides