Abstract:Solution-driven metal-oxide semiconductors have recently received much attention as a viable option for low-cost, flexible electronic devices. In this paper, a simple, environmentally friendly aqueous solution method has been adopted to deposit an ultrathin In2O3 semiconductor layer with a thickness of about 7 nm at low temperature. Then, in combination with the advantages of atomic layer deposition (ALD) technology, an ultrathin aluminum oxide dielectric layer of about 20 nm was prepared to fabricate high-performance In2O3/Al2O3 thin-film transistor (TFT) devices. The device with optimized annealing temperature of 280 degrees C has demonstrated an excellent electrical performance, including a high saturation mobility of 11.85 cm(2) .V-1 . s(-1), a large ON/OFF current ratio of 10(6), a low threshold voltage of 0.12 V, a small hysteresis voltage of 0.05 V, and a small density of interface state of 1.97 x 10(12) cm(-2), respectively. To demonstrate the potential of In2O3/AlOx TFT toward more complex logic applications, the unipolar inverter was further constructed and exhibited a high gain of 5. Importantly, all these device parameters were obtained at an ultralow operating voltage of 2.5 V. As a result, it can be inferred that the water-induced In2O3 TFTs based on ALD-derived Al2O3 dielectrics have a potential application as a promising alternative for lowcost, low-power consumption, and large-area environmentally friendly oxide flexible electronics.

Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

Solution-processed amorphous gallium oxide gate dielectric for low-voltage operation oxide thin film transistors

Solution-based SnGaO thin-film transistors for Zn- and In-free oxide electronic devices

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors

Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films

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Full-solution-processed High Mobility Zinc-Tin-oxide Thin-Film-transistors

Solution Processed Amorphous Gallium-Incorporated Tin Oxide Thin-Film Transistors

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Low Voltage Driven, Stable Solution-Processed Zinc-Tin-Oxide TFT with HfOy and AlOx Stack Gate Dielectric

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High performance amorphous IGO TFTs grown at low temperature

High-mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-Κ Alumina Dielectric Working in Enhancement Mode.

High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration

Amorphous In-Ga-Zn-O Thin-Film Transistors Fabricated by Microcontact Printing

Ultrathin Amorphous ZnGexSnO Films for High Performance Ultra-Thin-film Transistors

High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors with Low Tin Concentration