Effects of helium implantation fluence on the crystal-ion-slicing fabrication of Y-cut lithium niobate film
Limin Wan,Wenbo Luo,Ye Yuan,Kaisheng Zhang,Shitian Huang,Shijun Qiao,Xinqiang Pan,Yao Shuai,Wanli Zhang,Chuangui Wu
DOI: https://doi.org/10.1166/mex.2021.1952
2021-01-01
Materials Express
Abstract:In the present work, the contribution of Helium implantation fluence on the Crystal-Ion-Slicing fabrication (CIS) of Y-cut LiNbO3 film were systematically investigated. Y-cut Lithium niobate (LN) thin films with a submicron thickness on the Y-cut LN substrates were successfully fabricated by CIS technique by employing He implantation. By varying the implantation fluence, the structure evolution of the LN exfoliation layer was systematically investigated by Rutherford backscattering/channeling (RBS/C), X-ray Diffraction (XRD), Raman spectroscopy, as well as Atomic Force Microscopy (AFM). Upon gradually increasing the implantation fluence from 1.0x10(16) to 4.0x10(16) cm(-2), the lattice damage together with the tensile strain in the as-implanted LN becomes intensive according to the Raman spectroscopy investigations. In addition to the crystalline quality, the root mean square roughness becomes 1.4 nm upon increasing fluence till 4.0x10(16) cm(-2). The blistering threshold fluence for Y-cut LN is found to be between 1.0x10(16) and 2.0x10(16) cm(-2), and the Arrhenius plot of the blistering time as a function of reciprocal temperature shows that the activation of blistering is 2.14 eV, 1.77 eV and 1.44 eV for samples under fluence of 2.0x10(16), 3.0x10(16) and 4.0x10(16) cm(-2), respectively. Our experimental results unambiguously contribute to exploring the avenue of achieving high-quality layer, particularly highly anisotropic ones, by CIS techniques.