Abstract:TSV is a very hot topic today. It enables higher pin-out and finer pitch. However, the thermal-mechanical reliability is a big issue. The coefficient of thermal expansion(CTE) of copper, silicon and siliconoxide is about 17.5 × 10-6/°C 2.5×10-6/°C, 0.6×10-6/°C respectively. So when the TSV is subjected to thermal cycling load, large stress and strain would be created at the interface of the materials. In this work, Finite Element(FE) method was used to investigate the thermal-mechanical reliability of TSV. It is found the critical location is the junction between the overlaying flange Cu pad and the SIO2. And as the height of overlaying flange Cu pad decreases from 6μm to 2μm, the equivalent plastic strain decreases from 0.0195 to 0.0056. So the TSV with lower overlaying flange Cu pad would be more reliable. we also investigated reliability of blind hole. The bottom of the via is another critical location due to the mismatch of CTE. But the reliability is not sensitive to the depth of the blind hole. Finally, we investigated the effect of the geometry of the solder on the reliability. When the solder is hourglass joint and its width increases, the shear plastic strain is not sensitive to the width of solder. However, when the solder is spherical joint and its width increases, the shear plastic strain at the critical location increases significantly. Therefore, the reliability of spherical solder joint is much sensitive to its shape. And when the solder is cylinder column, the shear plastic strain is minimal.

Effect of Radiation on Reliability of Through-Silicon Via for 3-D Packaging Systems

Experimental Assessment and Analysis of the Influence of Radiation on Through-silicon Vias

Effects of 60Co γ ray radiation on the transmission characteristics of interconnection structures for 3D packaging

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Impact of multiple radiation leak paths on shielding effectiveness of ground vias in conformal-shielded SiP

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Characterization of corner/edge effects of through silicon via arrays and layout optimization in 3D integrated circuits

Gamma-Ray Irradiation Induced Dielectric Loss of SiO 2 /Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

Effect of X-rays Irradiation on the Reliability of 850nm High-speed VCSEL

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Study on the Noise Coupling and Shielding Between Through Silicon Vias

Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias

Effect of Blind Hole Depth and Shape of Solder Joint on the Reliability of Through Silicon Via (TSV)

Effects of Post-Cmp Annealing on TSV Cu Protrusion and Leakage Current

Radiation Effects in Printed Flexible Single-Walled Carbon Nanotube Thin-Film Transistors

Reliability study of through-silicon via (TSV) copper filled interconnects

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Thermal–Mechanical and Signal Reliability of a New Differentiated TSV

Total ionizing dose effects of Co-60-& gamma; ray radiation on SiC MOSFETs with different gate oxide thickness

Mechanical Reliability Testing of Air-Gap Through-Silicon Vias