Abstract:Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven't been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VT8) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at 0V. At 0V gate bias, gate oxide and package degenerate more severely at /25°C than at 25°C. The evolution of on-state resistance (R DSON ) during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes R DSON to reduce while package degradation makes R DSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.

Improved Single-Event Transient Hardness in Tunnel-Diode Body-Contact SOI Nmos

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

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The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

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Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Analysis of coupling effect between TID and SET in SOI Tri-Gate nanowire field-effect transistors

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Sentaurus TCAD simulation of SET and Radiation-Hardened technology for FDSOI TFET devices

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Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs

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Radiation of SOI MOSFET with Shallow Source

Line-edge Roughness Induced Single Event Transient Variation in SOI FinFETs