Abstract:The unique properties of topological insulators such as Bi2Se3 are intriguing for their potential implementation in novel device architectures for low power and defect-tolerant logic and memory devices. Recent improvements in the synthesis of Bi2Se3 have positioned researchers to fabricate new devices to probe the limits of these materials. The fabrication of such devices, of course, requires etching of the topological insulator, in addition to other materials including gate oxides and contacts which may impact the topologically protected surface states. In this paper, we study the impact of He+ sputtering and inductively coupled plasma Cl2 and SF6 reactive etch chemistries on the physical, chemical, and electronic properties of Bi2Se3. Chemical analysis by X-ray photoelectron spectroscopy tracks changes in the surface chemistry and Fermi level, showing preferential removal of Se that results in vacancy-induced n-type doping. Chlorine-based chemistry successfully etches Bi2Se3 but with residual Se-Se bonding and interstitial Cl species remaining after the etch. The Se vacancies and residuals can be removed with postetch anneals in a Se environment, repairing Bi2Se3 nearly to the as-grown condition. Critically, in each of these cases, angle-resolved photoemission spectroscopy (ARPES) reveals that the topologically protected surface states remain even after inducing significant surface disorder and chemical changes, demonstrating that topological insulators are quite promising for defect-tolerant electronics. Changes to the ARPES intensity and momentum broadening of the surface states are discussed. Fluorine-based etching aggressively reacts with the film resulting in a relatively thick insulating film of thermodynamically favored BiF3 on the surface, prohibiting the use of SF6-based etching in Bi2Se3 processing.

Patterning Bi2Se3 single-crystalline thin films on Si(111) substrates using strong oxidizing acids

Chemical Patterning of High-Mobility Semiconducting 2D Bi 2 O 2 Se Crystals for Integrated Optoelectronic Devices.

Chemical Patterning of High-Mobility Semiconducting 2D Bi2 O2 Se Crystals for Integrated Optoelectronic Devices

Wet Etching in β-Ga2O3 Bulk Single Crystal

Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

Ionic Liquid-Employed Synthesis of Bi 2 E 3 (E = S, Se, and Te) Hierarchitectures: the Case of Bi 2 S 3 with Superior Visible-Light-driven Cr(VI) Photoreduction Capacity

Atomic layer deposition and characterization of Bi1Se1 thin films

Kinetics-controlled Epitaxial Growth and Bipolar Transport Properties of Semimetal Bi4Se3

Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

Single Domain Bi2Se3 Films Grown on InP(111)A by Molecular-Beam Epitaxy

Patterning two-dimensional chalcogenide crystals of Bi 2 Se 3 and In 2 Se 3 and efficient photodetectors

Patterning Two-Dimensional Chalcogenide Crystals of Bi2se3 and In2se3 and Efficient Photodetectors

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Growth characteristics of topological insulator Bi2Se3 films on different substrates

High Quality Ultrathin Bi2Se3 Films on CaF2 and CaF2/Si by Molecular Beam Epitaxy with a Radio Frequency Cracker Cell

Surface Structure Dependence of Mechanochemical Etching: Scanning Probe-Based Nanolithography Study on Si(100), Si(110), and Si(111)

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films.