Growth and Characterization of Cigs Thin Films by Plasma-Assisted and Thermal-Assisted Se Vapor Selenization Process

Yunxiang Huang,Yong Tang,Wei Yuan,Xiaoqing Zhang,Wanyu Wen,Qinghui Wang

DOI: https://doi.org/10.1016/j.jallcom.2017.01.201

IF: 6.2

2017-01-01

Journal of Alloys and Compounds

Abstract:In this work, we investigate the material growth of the electrodeposited Cu/In/Ga stacked layers selenized by a plasma-assisted Se vapor selenization (PASVS) process at various substrate heating temperatures. For comparison, a merely thermal-assisted Se vapor selenization (TASVS) process is also tested. The PASVS process can help enhance the decomposition of Cu-In-Ga mixed phase and also the formation of Cu-Se and In-Se binary phases when the sample is selenized at 150 C. However, the use of PASVS process aggravates the element indium loss at the same temperature. Results also indicate that the PASVS process helps to activate the early formation of Ga-Se phase during selenization at 250 C. The PASVS process generates a porous surface structure with certain CuGaSe2 phase near the surface region at 350 C. With the increase of selenization temperature, the film selenized by the PASVS process is prone to a grain structure, while it is a polygonal structure in the case of TASVS. The PASVS process is more able to yield a pure CIGS phase with moderate Ga incorporation at a temperature of 550 (C) 2017 Elsevier B.V. All rights reserved.