Abstract:Conducting bridge random access memory (CBRAM) is one of the potential technologies being considered for replacement of Flash memory for non-volatile data storage. CBRAM devices operate on the principle of nucleation and rupture of metallic filaments. One key concern for commercializing this technology is the question of variability which could arise due to nucleation of multiple filaments across the device at spatially different locations. The spatial spread of the filament location may cause long tails at the low and high percentile regions for the switching parameter distribution as the new filament that nucleates may have a completely different shape and size. It is therefore essential to probe whether switching in CBRAM occurs every time at the same filament location or whether there are other new filaments that could nucleate during repeated cycling with some spatial correlation (if any) to the original filament. To investigate this issue, we make use of a metal-insulator-semiconductor (M-I-S) transistor test structure with Ni as the top electrode and HfOx/SiOx as the dielectric stack. In-situ stressing using a nano-tip on the M-I-S stack is performed and the filament is imaged in real-time using a high resolution transmission electron microscope (TEM). We also extract the location of the filament (LFIL) along the channel of the transistor after the nucleation stage using the weighted proportion of the source and drain currents.

Rtn-Based Defect Tracking Technique: Experimentally Probing the Spatial and Energy Profile of the Critical Filament Region and Its Correlation with Hfo2 Rram Switching Operation and Failure Mechanism

Analysis of RTN Signals in Resistive-Switching RAM Device and Its Correlation with Device Operations

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

Switching and Failure Mechanism of Self-Selective Cell in 3D VRRAM by RTN-Based Defect Tracking Technique

Investigation of Preexisting and Generated Defects in Nonfilamentary A-Si/tio2 RRAM and Their Impacts on RTN Amplitude Distribution

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

RTN based oxygen vacancy probing method for Ox-RRAM reliability characterization and its application in tail bits

Spatial Correlation of Conductive Filaments for Multiple Switching Cycles in CBRAM

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram

Research on Single Event Effect Test of a RRAM Memory and Space Flight Demonstration

A Novel Method of Identifying the Carrier Transport Path in Metal Oxide Resistive Random Access Memory

Identification and application of current compliance failure phenomenon in RRAM device

Defect Engineering in Multilayer H-Bn Based RRAM by Localized Helium Ion Irradiation

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Device Simulation and Modeling of RRAM Switching Processes

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Conduction mechanisms, dynamics and stability in ReRAMs