Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Analysis of RTN Signals in Resistive-Switching RAM Device and Its Correlation with Device Operations

Rtn-Based Defect Tracking Technique: Experimentally Probing the Spatial and Energy Profile of the Critical Filament Region and Its Correlation with Hfo2 Rram Switching Operation and Failure Mechanism

Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

Investigation of Preexisting and Generated Defects in Nonfilamentary A-Si/tio2 RRAM and Their Impacts on RTN Amplitude Distribution

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

Switching and Failure Mechanism of Self-Selective Cell in 3D VRRAM by RTN-Based Defect Tracking Technique

RTN based oxygen vacancy probing method for Ox-RRAM reliability characterization and its application in tail bits

Random Telegraph Noise Analysis In Alox/Woy Resistive Switching Memories

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Understanding the Switching Oxide Defect Formation and Recovery on HfOx Based RRAM Device

Analysis of Nano-Filament Evolution in Ni-based RRAM Devices Using In-Situ TEM

Correlation Analysis Between the Current Fluctuation Characteristics and the Conductive Filament Morphology of HfO2-based Memristor

An overview of the switching parameter variation of RRAM

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Impact of RTN and Variability on RRAM-Based Neural Network

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices