Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Correlation Analysis Between the Current Fluctuation Characteristics and the Conductive Filament Morphology of HfO2-based Memristor

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor

On the origin of filamentary resistive switching in oxides-based memristive devices

Oxygen Migration Around the Filament Region in HfOx Memristors

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Magnetoresistance of conductive filaments in resistive switching Co/HfO 2 /Pt structures

Atomic View of Filament Growth in Electrochemical Memristive Elements

Highly Stable HfO2 Memristors Through Van Der Waals Electrode Lamination and Delamination.

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Random telegraph noise characteristic of nonvolatile resistive random access memories based on optical interference principle

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Conductive Defect States Based Filament In Mom Structure Rram

Magnetoresistance of conductive filaments in resistive switching Co/HfO<inf>2</inf>/Pt structures

A Fluctuation Model for RRAMs Based on HfO2 Material

Memristors for Memory and Computing Applications

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies (adv. Mater. 10/2017)

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO 2 /Pt Resistive Switching Memory

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram