Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

RTN based oxygen vacancy probing method for Ox-RRAM reliability characterization and its application in tail bits

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Random Telegraph Noise Analysis In Alox/Woy Resistive Switching Memories

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Random telegraph noise characteristic of nonvolatile resistive random access memories based on optical interference principle

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Oxide-based RRAM: Physical based retention projection

Electrical and testing reliability of CuxO based RRAM

Study on High-Resistance State Instability of TaOx-Based RRAM

A Unified Physical Model of Switching Behavior in Oxide-Based RRAM

Optimizing molybdenum oxide based RRAM with vacuum rapid thermal annealing and carbon quantum dots

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Microscopic Origin of Read Current Noise in TaOx-based Resistive Switching Memory by Ultra-Low Temperature Measurement

Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

Monitoring oxygen movement by Raman spectroscopy of resistive random access memory with a graphene-inserted electrode.

RTN Impacts on RRAM-based Nonvolatile Logic Circuit

Ru-Based Oxide Resistive Random Access Memory For Beol-Compatible Novel Nvm Applications

Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement