Abstract:OBJECTIVE To explore the effect of prostaglandin E2 (PGE2) on the expression of high mobility group box-1 protein (HMGB1) in peritoneal macrophages of septic mice and its possible mechanisms.  Methods: The mouse peritoneal macrophages were isolated and cultured by conventional methods.The model of inflammation was established by using lipopolysaccharide (LPS) to incubate with mouse peritoneal macrophages. The PGE2, prostaglandin E receptor (EP) 4 agonist, EP4 RNAi, and DN.CREB inhibitory plasmid were used to interfere with the LPS-treated mouse peritoneal macrophage. The levels of HMGB1 was determined by Western blot.  Results: Compared with LPS alone treatment, the expression of HMGB1 in peritoneal macrophages was increased obviously after 24 h by treatment with PGE2 and LPS, and it was also increased after the combined treatment of EP4 receptor agonist with LPS for 24 h (both P<0.05); compared with the PGE2+LPS treatment, the level of HMGB1 was decreased after knockdown of EP4 receptor expression (P<0.05); compared with EP4 receptor agonist +LPS treatment, there was no difference in HMGB1 levels in mice after the treatment with DN.CREB plasmid to suppress CREB function (P>0.05); compared with LPS alone treatment, the combined treatment of EP4 receptor agonist with LPS for 24 h could up-regulate the phosphorylation of epidermal growth factor receptor (EGFR) and protein kinase B (Akt) thr308 (P<0.05), which were blocked by EGFR inhibitor. Once Akt specific inhibitor was used before EP4 and LPS treatment, the expression of HMGB1 was declined (P<0.05).  Conclusion: PGE2 can up-regulate the expression of HMGB1 in sepsis of peritoneal macrophages through EP4 receptor, which may be related to the activation of EGFR/PI3K/Akt signaling pathway.

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

A Unified Physical Model of Switching Behavior in Oxide-Based RRAM

[Mechanisms for the regulatory effect of prostaglandin E2/prostaglandin E receptor 4 on high mobility group box-1 protein in lipopolysaccharide-induced sepsis in mouse peritoneal macrophage].

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Oxide-Based Rram Switching Mechanism: A New Ion-Transport-Recombination Model

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations

Co-existed Unipolar and Bipolar Resistive Switching Effect of HfOx-based RRAM

Effect Of Tiox Film Thickness On Resistive Switching Behavior Of Tin/Tiox/Hfo2/Pt Rram Device

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

Self- Compliance Unipolar Resistive Switching and Mechanism of Cu/SiO2/TiN RRAM Devices

Investigation of Forming Free Bipolar Resistive Switching Characteristics in Al/Mn3O4/FTO RRAM Device

Nonvolatile Bipolar Resistive Switching Characteristics of Aluminum Oxide Grown by Thermal Oxidation Processes

Resisitive Switching Variability Study on 1T1R AlOx/WOx-based RRAM Array