Abstract:The concept of memory that can only be read but cannot be changed seems strange at first. In reality, it is found that it has great application potential, such as the processor with a fixed purpose, the initial set value of the microprocessor BIOS, and these data are stored in Programmable Read-Only Memory (PROM) to quickly realize system functions. The PROM storage content is fixed, greatly simplifying his design. The radiation of space particles is the main factor causing the failure of the electronic system of spacecraft. The PROM storage array of the space electronic system is the most basic guarantee for the normal operation of the electronic system. The chip adopts domestic 130 nm standard technology of Complementary Metal Oxide Semiconductor (CMOS), Muller-C digital filter is used in the peripheral subsystem of PROM storage array, and the core cell uses Dual Interlocked Cell (DICE) and ring gate and other radiation hardening technologies to design a 32Kx8bit radiation resistant asynchronous programmable PROM. Pre-silicon of devices was verified by Technology Computer Aided Design (TCAD), and post silicon radiation verification was completed through radiation experiment. The post silicon radiation experiment showed that the total ionizing Dose (TID) capacity of the PROM chip was ≥100 Krad (Si), the critical value of single event upset (SEU) was ≥37.1 MeV·cm 2 /mg, the critical value of single event latch up was ≥98 MeV·cm 2 /mg, meeting the life requirements of the initial value storage of aerospace electronic systems. These performances ensure the reliable operation of the space electronic system after restart.

Research on Single Event Effect Test of a RRAM Memory and Space Flight Demonstration

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Parallel Simulation of Resistive Random Access Memory with Hexahedral Elements

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Design and analysis of an adaptive radiation resilient RRAM subsystem for processing systems in satellites

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Characterization of Single Event Effect in a Radiation Hardened Programmable Read-Only Memory in a 130 nm Bulk CMOS Technology

A 14T Radiation Hardened SRAM for Space Applications with High Reliability

Novel radiation-hardened SRAM for immune soft-error in space-radiation environments

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Pulsed-laser Testing for Single Event Effects in a Stand-Alone Resistive Random Access Memory

Study on Single Event Upsets in a 28 Nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation

Highly Stable Radiation-Hardened Resistive-Switching Memory

Total Ionization Dose and Single Event Effects of a Commercial Stand-Alone 4 Mb Resistive Random Access Memory (Reram)

A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications.

Write-enhanced and Radiation-Hardened SRAM for Multi-Node Upset Tolerance in Space-Radiation Environments

Experimental study on radiation effects in floating gate read-only-memories and static random access memories

Heavy Ion Radiation Effects on a 130-Nm COTS NVSRAM under Different Measurement Conditions

A Reliable and high performance Radiation Hardened Schmitt Trigger 12T SRAM cell for space applications

Experimental study on the suitability of using SRAM based FPGAs in navigation satellite