Abstract:The static random access memory (SRAM), as a common and important high-speed storage module in modern digital circuit systems, plays an important role in improving the performances of electronic systems. The data about the total ionizing dose (TID) radiation effect of SRAM cell have not been rich in the literature so far. In this work, a novel 6-transistor SRAM cell (6T LB SRAM cell) based on L-type gate body-contact (LB) MOSFET device is designed and fabricated by 130nm silicon-on-insulator (SOI) process. The LB MOSFET follows the center-symmetric layout design of the SRAM cell, reducing the area by approximately 22% compared with the SRAM cell using the T-type gate MOSFET contact device (6T TB SRAM cell) of the same device size. The electrical performance difference between LB MOSFET and other devices is compared. Besides this, the variations of the leakage current and the reading static noise margin (RSNM) of SRAM cells based on different MOSFETs under various total ionizing doses are also investigated. The test results indicate that the LB MOS successfully suppresses the floating body effect (FBE), and that the drain-induced barrier lowing (DIBL) and drain-to-source breakdown voltage (BVds) characteristics are improved. The performance of this device is similar to that of TB MOS device, but due to the special body contact design, the former has an advantage of smaller area. Due to the use of the body contact device, the leakage current of the 6T LB SRAM cell is significantly smaller than that of the conventional floating device SRAM cell (6T FB SRAM cell), which has lower static power consumption. After 60Co-γ ray irradiation, the 700 krad(Si) radiation dose only increases the leakage current of 6T LB SRAM cell by 21.9%, which is better than 41.4% of 6T FB SRAM cell. In addition, the 6T LB SRAM cell has an RSNM value similar to that of the 6T TB SRAM cell, and this is 1.93 times higher than the that of 6T FB SRAM cell. The radiation experiment causes the butterfly curve of the 6T FB SRAM cell to be asymmetrically deformed, and the stability of the SRAM cell is deteriorated due to the TID effect. However, the test results show that when the radiation dose reaches 700 krad (Si), the RSNM value of the 6T LB SRAM cell is reduced only by 11.2%. Therefore, 6T LB SRAM cell has stable and reliable practical value.

Heavy Ion Radiation Effects on a 130-Nm COTS NVSRAM under Different Measurement Conditions

Experimental Study on Heavy Ion Single Event Effects in SOI SRAMs

Research on Single Event Effect Test of a RRAM Memory and Space Flight Demonstration

Mitigation of Single-Event Upset Sensitivity for 6T SRAM in a 0.18 Μm DSOI Technology Considering High LET Heavy Ions Irradiation

A Comparison of Heavy Ion Induced Single Event Upset Susceptibility in Unhardened 6t/sram and Hardened Ade/Sram

Heavy Ion and Proton Induced Single Event Upsets in 3D SRAM

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Heavy Ion Energy Influence on Multiple-Cell Upsets in Small Sensitive Volumes: from Standard to High Energies

Total Ionizing Dose Effects on Innovative Silicon-on-insulator Static Random Access Memory Cell

Characterization of Single Event Cell Upsets in a Radiation Hardened SRAM in a 40 Nm Bulk CMOS Technology

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Study on Single Event Upsets in a 28 Nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation

Experimental Investigation of SEUs Induced by Heavy Ions in 28-Nm FDSOI SRAMs

The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM

Characterization of LDO Induced Increment of SEE Sensitivity for 22-Nm FDSOI SRAM

Ultra-High-Energy Heavy Ion Induced Single Event Effect of TSV-Based 3D Integrated SOI SRAM Circuits

Mechanism and Equivalence of Single Event Effects Induced by 14 MeV Neutrons in High-Speed QDR SRAM

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Heavy ion induced single event effects in semiconductor device1This subject was supported by the Chinese Academy of Sciences.1

Testing of a new type SEU-tolerant SRAM