Abstract:For advanced technology nodes, the static random access memories (SRAMs) are highly vulnerable to the single-event upsets (SEUs), especially the multiple cell upsets (MCUs), by a high-energy ion strike, which is due to the small transistor size and close proximity of the sensitive regions. However, the narrow connection between the fin and the bulk region for fin field-effect transistor (FinFET) inhibits the charge collection compared to the planar transistor structure. In this work, heavy-ion tests were conducted for 16-nm bulk FinFET dual-port SRAMs at two high linear energy transfers (LETs) of 60 and 85 MeV $\cdot $ cm2/mg. The non-saturating behavior of the SEU cross sections and event cross sections for a bit cell is observed even over the LET of 60 MeV $\cdot $ cm2/mg due to the expanding of the sensitive area surrounding the array and the cutting-off area in the FinFET SRAM cells. The distribution curves of the MCU event probabilities for different MCU cluster sizes show that the single-bit upset (SBU) occupies the largest probability of all the single-event cluster sizes, which exhibits the inhibition capability of the Fin structure against the upsets induced by high-energy particles. The parasitic bipolar effect (PBE) is also serious for 16-nm FinFET SRAMs as former planar SRAM, but the charge-sharing effect is effectively inhibited due to the narrow connection between the fin and the bulk region for FinFET. Results presented in this article will help designers estimate the error correcting code (ECC) and interleaving design parameters for radiation-hardened SRAM designs at the 16-nm FinFET process.

Ultra-High-Energy Heavy Ion Induced Single Event Effect of TSV-Based 3D Integrated SOI SRAM Circuits

Heavy Ion and Proton Induced Single Event Upsets in 3D SRAM

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Experimental Study on Heavy Ion Single Event Effects in SOI SRAMs

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

Single Event Upset for Monolithic 3-D Integrated 6T SRAM Based on a 22 Nm FD-SOI Technology: Effects of Channel Size and Temperature

Mitigation of Single-Event Upset Sensitivity for 6T SRAM in a 0.18 Μm DSOI Technology Considering High LET Heavy Ions Irradiation

Prediction of Low-Let Ion Induced Single Event Upset Cross Sections for Advanced SRAM

Influence of edge effects on single event upset susceptibility of SOI SRAMs

Heavy Ion Radiation Effects on a 130-Nm COTS NVSRAM under Different Measurement Conditions

Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-Nm Bulk FinFET SRAMs

A Comparison of Heavy Ion Induced Single Event Upset Susceptibility in Unhardened 6t/sram and Hardened Ade/Sram

Single-Event Upset Prediction in SRAMs Account for On-Transistor Sensitive Volume

Experimental Research of Multiple Cell Upsets in 65 nm Triple-well CMOS Static Random Access Memory

Heavy Ion Energy Influence on Multiple-Cell Upsets in Small Sensitive Volumes: from Standard to High Energies

Experimental Investigation of SEUs Induced by Heavy Ions in 28-Nm FDSOI SRAMs

The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM

Simulation of the Characteristics of Low-Energy Proton Induced Single Event Upset

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs