Abstract:The contribution of Coulomb elastic scattering of protons and heavy ions to single-event upsets (SEUs) is concerned in nanometric electronic devices. In this work, Monte Carlo Geant4 simulations are used to investigate the impact of Coulomb elastic scattering of protons and iron ions on SEUs in a 22 nm silicon-on-insulator (SOI) static random access memory (SRAM). The SEU cross section and multiple-bit upset (MBU) proportion versus incident energy curves for protons and iron ions have been estimated for the SRAM thanks to numerical Geant4 simulations. The ionization processes of ionizing radiation causing SEUs are sorted into three parts: direct ionization from primary particles, indirect ionization from Coulomb recoil atoms, and indirect ionization from secondary particles produced by nuclear reactions. Their relative contributions to SEUs and MBUs are analyzed. The contribution of Coulomb elastic scattering to SEUs cannot be neglected in the energy range from 2 to 6 MeV and below 40 MeV for protons and iron ions, respectively. In the case of iron ion incidence, it is observed that the total SEU cross section decreases in the energy range from 16 to 40 MeV. It can be attributed to the decrease in the Coulomb elastic scattering cross section of iron ions. The probability distributions of energy deposited in the sensitive volumes (SVs) are calculated for iron ions with different energies. The sources of energy deposited in an SV can be sorted into three cases. The three parts of the probability distribution of deposited energy corresponding to these three cases change with increasing incident energy, which can well explain the observed SEU response.

Heavy Ion Energy Influence on Multiple-Cell Upsets in Small Sensitive Volumes: from Standard to High Energies

The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM

Heavy Ion Testing and Numerical Modeling of Single EventMultiple-Cell Upsets on 90 nm Bulk CMOS SRAM

Heavy Ion Induced Single Event Upsets on 65 Nm Advanced CMOS Technology SRAM

Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-Nm Bulk FinFET SRAMs

Single-event Effects Induced by Medium-Energy Protons in 28 Nm System-on-chip

Study on Single Event Upsets in a 28 Nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation

Experimental Investigation of SEUs Induced by Heavy Ions in 28-Nm FDSOI SRAMs

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

Experimental Studies of Single-Event Effects Induced by Heavy Ions

A Comparison of Heavy Ion Induced Single Event Upset Susceptibility in Unhardened 6t/sram and Hardened Ade/Sram

Heavy ion induced single event effects in semiconductor device1This subject was supported by the Chinese Academy of Sciences.1

Experimental Research of Multiple Cell Upsets in 65 nm Triple-well CMOS Static Random Access Memory

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Experimental Study on Heavy Ion Single Event Effects in SOI SRAMs

Impact of Coulomb elastic scattering of protons and iron ions on single-event upsets in a 22 nm SOI SRAM

Heavy Ion and Proton Induced Single Event Upsets in 3D SRAM

Influences of Supply Voltage on Single Event Upsets and Multiple-Cell Upsets in Nanometer SRAM Across a Wide Linear Energy Transfer Range*

Mitigation of Single-Event Upset Sensitivity for 6T SRAM in a 0.18 Μm DSOI Technology Considering High LET Heavy Ions Irradiation

Simulation of the Characteristics of Low-Energy Proton Induced Single Event Upset

Heavy Ion Radiation Effects on a 130-Nm COTS NVSRAM under Different Measurement Conditions