Abstract:The contribution of Coulomb elastic scattering of protons and heavy ions to single-event upsets (SEUs) is concerned in nanometric electronic devices. In this work, Monte Carlo Geant4 simulations are used to investigate the impact of Coulomb elastic scattering of protons and iron ions on SEUs in a 22 nm silicon-on-insulator (SOI) static random access memory (SRAM). The SEU cross section and multiple-bit upset (MBU) proportion versus incident energy curves for protons and iron ions have been estimated for the SRAM thanks to numerical Geant4 simulations. The ionization processes of ionizing radiation causing SEUs are sorted into three parts: direct ionization from primary particles, indirect ionization from Coulomb recoil atoms, and indirect ionization from secondary particles produced by nuclear reactions. Their relative contributions to SEUs and MBUs are analyzed. The contribution of Coulomb elastic scattering to SEUs cannot be neglected in the energy range from 2 to 6 MeV and below 40 MeV for protons and iron ions, respectively. In the case of iron ion incidence, it is observed that the total SEU cross section decreases in the energy range from 16 to 40 MeV. It can be attributed to the decrease in the Coulomb elastic scattering cross section of iron ions. The probability distributions of energy deposited in the sensitive volumes (SVs) are calculated for iron ions with different energies. The sources of energy deposited in an SV can be sorted into three cases. The three parts of the probability distribution of deposited energy corresponding to these three cases change with increasing incident energy, which can well explain the observed SEU response.

Heavy Ion and Proton Induced Single Event Upsets in 3D SRAM

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

SEU ground and flight data in static random access memories

Impact of Coulomb elastic scattering of protons and iron ions on single-event upsets in a 22 nm SOI SRAM

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

Testing of a new type SEU-tolerant SRAM

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Experimental Studies of Single-Event Effects Induced by Heavy Ions

SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Methods for Proton Direct Ionization SEU Characterization and Orbital Error-Rate Estimation

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs