Abstract:In this article, we present AlGaN/GaN-based lateral Schottky barrier diodes (SBDs) on sapphire substrate with fully recessed anodes and a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vphantom{_{\int}}$</tex-math> </inline-formula> high-permittivity field plate (FP). A specific ON-resistance of 3.2 m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega$</tex-math> </inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot$</tex-math> </inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> , an on/off current ratio of 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{10}}$</tex-math> </inline-formula> , and a reverse breakdown voltage (BV) of 2.5 kV are simultaneously achieved for the device with the anode-to-cathode space of 30 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> m. This yields a Baliga’s power figure-of-merit (BFOM) of 1.95 GW/cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> . Our fabricated device shows that the leakage current is hardly affected by the reverse bias. It is because the electric field is pushed apart from the Schottky contact region by the high-permittivity FP. This causes the absence of the defect-related carrier tunneling effect at the Schottky contact region. Meanwhile, the high-permittivity FP helps extend the depletion effect for the drift region and gives rise to the increased BV.

A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting

AlGaN/GaN Lateral CRDs with Hybrid Trench Cathodes

An AlGaN/GaN Current Regulating Diode

A novel AlGaN/GaN hybrid-anode current regulating diode (CRD) with step-graded Schottky-Ohmic cathode

Depletion MOS Controlled Current Regulator Diode Based on Bipolar Carrier Transport

A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

GaN-on-sapphire JTE-anode Lateral Field-Effect Rectifier for Improved Breakdown Voltage (>2.5 Kv) and Dynamic RON

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

Novel SiC/Si Heterojunction LDMOS with Electric Field Modulation Effect by Reversed L-shaped Field Plate

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Electric Field Modulation Technique for High-Voltage AlGaN/GaN Schottky Barrier Diodes

An Ultralow Loss Reverse-Conducting LIGBT with Embedded P-P-N Diode in Oxide Trench

Lateral P-Gan/2deg Junction Diodes By Selective-Area P-Gan Trench-Filling-Regrowth In Algan/Gan

2.5 kV/1.95 GW/cm<inline-formula> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-<italic>k</italic> Field Plate to Reduce Reverse Current

Novel Lateral Igbt with N-Region Controlled Anode on Soi Substrate

Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode

Tunable Current Regulative Diode Based on Van Der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor

High-Voltage Algan/Gan-Based Lateral Schottky Barrier Diodes

Optimizing Forward Drop and Reverse Leakage Trade-Off in AlGaN/GaN Lateral Diode with Schottky-Metal-Insulator-Semiconductor Cascode Anode

High-voltage Super-Junction Lateral Double-Diffused Metal—oxide Semiconductor with a Partial Lightly Doped Pillar

Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT with Embedded P-Type Schottky Barrier Diode