High-voltage Super-Junction Lateral Double-Diffused Metal—oxide Semiconductor with a Partial Lightly Doped Pillar

Wu Wei,Zhang Bo,Luo Xiao-Rong,Li Zhao-Ji

DOI: https://doi.org/10.1088/1674-1056/22/6/068501

2013-01-01

Abstract:A novel super-junction lateral double-diffused metal-oxide semiconductor（SJ-LDMOS） with a partial lightly doped P pillar（PD） is proposed.Firstly,the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect.Secondly,the new electric field peak produced by the P/P-junction modulates the surface electric field distribution.Both of these result in a high breakdown voltage（BV）.In addition,due to the same conduction paths,the specific on-resistance（R on,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS.Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20V/μm at a 15μm drift length,resulting in a BV of 300V.