Abstract:To deal with the conflict of specific on resistance (RON-sp) and breakdown voltage (BV) in design of SiC LDMOS power devices, a SiC LDMOS power device with low RON-sp is given and its principle is studied in the paper. The proposed structure consists of a conduction cell with several poly plates and a modulation cell with floating electrodes. The modulation cell consists of two opposite diodes in series and does not participate in current conduction. In the on state, gate voltage ( V G ) is delivered to modulation cell, which is held on by P+/N-well junction in drain side. Then the floating electrodes deliver V G back to the conduction cell for electron attraction. Because a electron accumulation layer is existed on surface of N-drift region, a low resistive current path is formed. The low resistive current path greatly decreases RON-sp of SiC LDMOS. In the off state, modulation cell can be designed to reach a high BV without considering the forward conduction performance. In the conduction cell, thanks to the potential modulation of poly plates connected to floating electrodes, a high BV can also be obtained. Experimental results and comparison analysis show the given SiC LDMOS gains better performance than traditional SiC LDMOS. RON-sp is 34.8% less than traditional SiC LDMOS device without degenerating BV.

Accumulation-Mode Silicon Carbide Laterally Diffused Metal Oxide Semiconductor with Low Specific on Resistance