Abstract:The forward and reverse conduction paths of conventional reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT), such as recently reported trench barrier and shorted anode (TBSA) RC-LIGBT, are crossed; hence, its forward conduction voltage ( ${V}_{F}$ ) and reverse conduction voltage ( ${V}_{R}$ ), as well as its reverse recovery charge ( ${Q}_{\text {RR}}$ ) and latch-up capability, have to be compromised. To solve this, a novel RC-LIGBT with embedded p-p-n diode in oxide trench (EDOT) is proposed and investigated. The proposed EDOT RC-LIGBT is formed by embedding the EDOT on the top of the $\text{N}^{-}$ drift in conventional LIGBT; hence, its forward and reverse conduction paths are separated. In the forward conduction state, the current is fully conducted by the LIGBT part. Since no $\text{N}^{+}$ anode in the LIGBT part and the EDOT enhances the hole storage on the cathode side, a low ${V}_{F}$ is obtained. In the reverse conduction state, the current is fully conducted by the p-p-n diode, which brings a low ${V}_{R}$ . With no $\text{N}^{+}$ cathode and $\text{P}^{+}$ cathode in the EDOT, ${Q}_{\text {RR}}$ is reduced by 68.9% compared to TBSA RC-LIGBT, without detriment to the latch-up capability. Consequently, the proposed device achieves a better balance between ${V}_{F}$ and ${V}_{R}$ , as well as ${Q}_{\text {RR}}$ and latch-up capability. Besides, the EDOT not only optimizes the hole distribution but also accelerates the building of the electric field during the turn-off; hence, the turn-off loss ( ${E}_{\rm OFF}$ ) of the proposed device with 307-V blocking voltage is reduced by 57.1% at ${I}_{\text {AK}}$ = 150 A/cm2 and ${V}_{F}$ = 1.21 V.

Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT with Embedded P-Type Schottky Barrier Diode

Simulation Study on a Novel Snapback-Free and Low Turn-off Loss Reverse-Conducting SOI-LIGBT with P-type Double Trench Gates on the Anode Region

A Snapback-Free and High-Performance Trench Gate Reverse-Conducting SOI-LIGBT With Self-Adaptive nMOS

A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT with Integrated Polysilicon Diodes

A Snapback-Free and Reverse Conducting SOI-LIGBT with Self-Adaptive Electron Barriers

A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT with Embedded Diode and MOSFET

A Novel Snapback-Free Reverse-Conducting (RC) SOI-LIGBT with a Built-in Thyristor.

A Snapback-Free Reverse-Conducting Igbt With Integrated Schottky Diode In The Collector

A Novel Snapback-Free Reverse Conducting IGBT with Anti-Parallel Shockley Diode

A superjunction snapback-free reverse-conducting insulated gate bipolar transistor with anti-parallel p-i-n diode

An Ultralow Loss Reverse-Conducting LIGBT with Embedded P-P-N Diode in Oxide Trench

Snapback-free RC-LIGBT with Integrated LDMOS and LIGBT

A Novel Self-Controlled Double Trench Gate Snapback Free Reverse-Conducting IGBT with a Built-in Trench Barrier Diode

Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability

Snapback-Free Shorted Anode Ligbt With Controlled Anode Barrier And Resistance

A Snapback-Free Rc-Ligbt With Separated Ldmos And Ligbt By The L-Shaped Sio2 Layer

A Snapback-Free Fast-Switching SOI LIGBT with Polysilicon Regulative Resistance and Trench Cathode

A Snapback-Free and Low-Loss RC-LIGBT With Integrated Double Self-Biased nMOS

Separated Reverse-Conducting Insulated-Gate Bipolar Transistor with Snapback-Free Characteristics

A Snapback-Free and Low-Loss RC-IGBT with Lateral FWD Integrated in the Terminal Region

A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer