Abstract:The forward and reverse conduction paths of conventional reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT), such as recently reported trench barrier and shorted anode (TBSA) RC-LIGBT, are crossed; hence, its forward conduction voltage ( ${V}_{F}$ ) and reverse conduction voltage ( ${V}_{R}$ ), as well as its reverse recovery charge ( ${Q}_{\text {RR}}$ ) and latch-up capability, have to be compromised. To solve this, a novel RC-LIGBT with embedded p-p-n diode in oxide trench (EDOT) is proposed and investigated. The proposed EDOT RC-LIGBT is formed by embedding the EDOT on the top of the $\text{N}^{-}$ drift in conventional LIGBT; hence, its forward and reverse conduction paths are separated. In the forward conduction state, the current is fully conducted by the LIGBT part. Since no $\text{N}^{+}$ anode in the LIGBT part and the EDOT enhances the hole storage on the cathode side, a low ${V}_{F}$ is obtained. In the reverse conduction state, the current is fully conducted by the p-p-n diode, which brings a low ${V}_{R}$ . With no $\text{N}^{+}$ cathode and $\text{P}^{+}$ cathode in the EDOT, ${Q}_{\text {RR}}$ is reduced by 68.9% compared to TBSA RC-LIGBT, without detriment to the latch-up capability. Consequently, the proposed device achieves a better balance between ${V}_{F}$ and ${V}_{R}$ , as well as ${Q}_{\text {RR}}$ and latch-up capability. Besides, the EDOT not only optimizes the hole distribution but also accelerates the building of the electric field during the turn-off; hence, the turn-off loss ( ${E}_{\rm OFF}$ ) of the proposed device with 307-V blocking voltage is reduced by 57.1% at ${I}_{\text {AK}}$ = 150 A/cm2 and ${V}_{F}$ = 1.21 V.

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An Ultralow Loss Reverse-Conducting LIGBT with Embedded P-P-N Diode in Oxide Trench

An Ultralow Turn-Off Loss SOI-LIGBT with a High-Voltage P-I-n Diode Integrated on Field Oxide

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Experimental Study on SOI LIGBT with Field Plate Resistances at Anode Side