Abstract:A novel 600-V snapback-free and low-loss shorted-anode (SA) silicon on insulator lateral insulated gate bipolar transistor (LIGBT) with self-adaptive resistance (SAR) in anode is proposed and investigated by simulation, named SAR LIGBT. The device is characterized by dual anode trenches which are filled with p-type polysilicon and surrounded by oxide, and the dual trenches are shorted with the anode electrode, separated by the low-doped N− region and N+ anode region. At low anode voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{A}$ </tex-math></inline-formula> ), the N− region is fully depleted by p-type polysilicon, serving as a large resistance to hinder electrons flowing into the N+ anode; at high VA, an electron accumulation layer is formed along the anode trenches to provide a low-resistance path for electron current. Consequently, N− region makes the distributed resistances at the anode side ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\text {SA}}$ </tex-math></inline-formula> ) act as a SAR. It not only eliminates the snapback effect but also reduces on-state voltage drop ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> ) and turn-off energy loss ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ). Therefore, SAR LIGBT achieves a better tradeoff between <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> . At the same <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> , the SAR LIGBT reduces the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> by 20.6%, 28.1%, and 30.5% compared with those of multisegment anode, segmented trenches in the anode, and SA-NPN LIGBTs, respectively. Moreover, the SAR LIGBT exhibits the lowest <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> of 1.71 V and the shortest switching time of 93 ns at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$J_{A} = {100}$ </tex-math></inline-formula> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . In addition, the SAR LIGBT achieves snapback-free with smaller cell pitch than that of separated SA LIGBT.

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