A Snapback-Free and Low-Loss RC-LIGBT With Integrated Double Self-Biased nMOS
Weizhong Chen,Cheng Li,Wenliang Shen,Hongsheng Zhang,Yi Huang,Zhengsheng Han
DOI: https://doi.org/10.1109/ted.2024.3394454
IF: 3.1
2024-05-25
IEEE Transactions on Electron Devices
Abstract:A snapback-free and low turn-off loss reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with integrated double self-biased n-channel MOS, named DSM is demonstrated by the TCAD SENTAURUS. The DSM including extraction charge nMOS (EC-MOS) and reverse conduction nMOS (RC-MOS) are both located at the collector side. The gates of the EC-MOS and RC-MOS are shortly connected with the N+ collector and N-base, respectively. Consequently, the double auxiliary gates automatically turn on functions without an extra control signal. First, at the forward conduction, the EC-MOS is automatically turned on with a saturated state while the RC-MOS is turned off. Moreover, the P-base substrate of the DSM acts as the electron barrier, which can avoid the short effect of the N+ Collector, thus the snapback is eliminated. Second, at the reverse conduction, the EC-MOS is turned off and the RC-MOS is triggered automatically with a saturate state, then the reverse conduction capability is realized. Third, at the turn-off process, the RC-MOS is turned off, and the EC-MOS is automatically turned on again to extract excessive carriers with the increased bus voltage , thus the turn-off energy loss ( is effectively reduced. As a result, the DSM-LIGBT achieves a snapback-free and superior trade-off relationship between and .
engineering, electrical & electronic,physics, applied