Abstract:A novel reverse-conducting (RC) lateral insulated gate bipolar transistor based on the silicon-oninsulator (SOI-LIGBT) with integrated parallel/antiparallel polysilicon diodes (D-F and D-R) on the top of the anode active region is proposed and investigated by simulation. During the turn-off transient, the major part of the excess electron current flows through the parallel diode DF which achieves a low turn-off loss (E-OFF). While during the forward-conducting state, the voltage across the p+anode/ n-buffer junction can rapidly increase to the junction's built-in potential (V-bi) at low anode current, which results in snapback immunity. Moreover, the antiparallel diode D-R enables the proposed device to realize RC capability. Simulation results reveal that the proposed RC-LIGBT can realize superior E-OFF-V-ON tradeoff relationship than both the conventional LIGBT and the separated shorted-anode LIGBT (SSA-LIGBT). When E-OFF is 0.44 mJ/cm(2), V-ON of the proposed RC-LIGBT is 1.95 V, which is 0.47 V lower than that of the SSA-LIGBT. Under V-ON of 1.95 V, E-OFF of the proposed RC-LIGBT is 0.44 mJ/cm(2), which is reduced by 44.3% than that of the conventional LIGBT. Furthermore, the reverse recovery charge (Q(rr)) of the proposed device is reduced by 25.8% compared with that of the conventional one. In addition, diodes D-F and D-R and the thin oxide layer below can be fabricated during the implementation of the polysilicon gate. Therefore, there is no extra difficulty in the fabrication process of the proposed RC-LIGBT

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