Abstract:The forward and reverse conduction paths of conventional reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT), such as recently reported trench barrier and shorted anode (TBSA) RC-LIGBT, are crossed; hence, its forward conduction voltage ( ${V}_{F}$ ) and reverse conduction voltage ( ${V}_{R}$ ), as well as its reverse recovery charge ( ${Q}_{\text {RR}}$ ) and latch-up capability, have to be compromised. To solve this, a novel RC-LIGBT with embedded p-p-n diode in oxide trench (EDOT) is proposed and investigated. The proposed EDOT RC-LIGBT is formed by embedding the EDOT on the top of the $\text{N}^{-}$ drift in conventional LIGBT; hence, its forward and reverse conduction paths are separated. In the forward conduction state, the current is fully conducted by the LIGBT part. Since no $\text{N}^{+}$ anode in the LIGBT part and the EDOT enhances the hole storage on the cathode side, a low ${V}_{F}$ is obtained. In the reverse conduction state, the current is fully conducted by the p-p-n diode, which brings a low ${V}_{R}$ . With no $\text{N}^{+}$ cathode and $\text{P}^{+}$ cathode in the EDOT, ${Q}_{\text {RR}}$ is reduced by 68.9% compared to TBSA RC-LIGBT, without detriment to the latch-up capability. Consequently, the proposed device achieves a better balance between ${V}_{F}$ and ${V}_{R}$ , as well as ${Q}_{\text {RR}}$ and latch-up capability. Besides, the EDOT not only optimizes the hole distribution but also accelerates the building of the electric field during the turn-off; hence, the turn-off loss ( ${E}_{\rm OFF}$ ) of the proposed device with 307-V blocking voltage is reduced by 57.1% at ${I}_{\text {AK}}$ = 150 A/cm2 and ${V}_{F}$ = 1.21 V.

Experimental Study on SOI LIGBT with Field Plate Resistances at Anode Side

Simulation Study on a Novel Snapback-Free and Low Turn-off Loss Reverse-Conducting SOI-LIGBT with P-type Double Trench Gates on the Anode Region

A Snapback-Free Fast-Switching SOI LIGBT with Polysilicon Regulative Resistance and Trench Cathode

A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT with Integrated Polysilicon Diodes

Improvement of Electrical Performance of SOI-LIGBT by Resistive Field Plate

A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT with Embedded Diode and MOSFET

A Snapback-Free and Reverse Conducting SOI-LIGBT with Self-Adaptive Electron Barriers

Novel Integrated Double Pmos SOI-LIGBT with Low Loss and High Short-Circuit Capability

Snapback-Free Shorted Anode Ligbt With Controlled Anode Barrier And Resistance

Bypass Anode Lateral Igbt On Soi For Snapback Suppression

A Novel Self-Regulated Potential SOI LIGBT with Low ON-State Voltage and Turn-off Loss

Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT with Embedded P-Type Schottky Barrier Diode

Fast-Switching and Low-Loss SOI LIGBT with Recombination Electrode and Double U-Shaped P-Regions

Operation mechanism and performance optimization for a novel ultralow loss SOI LIGBT with high current capability

A Snapback-Free and High-Performance Trench Gate Reverse-Conducting SOI-LIGBT With Self-Adaptive nMOS

An Ultralow Turn-Off Loss SOI-LIGBT with a High-Voltage P-I-n Diode Integrated on Field Oxide

A Low Turnoff Loss SOI LIGBT with P-Buried Layer and Double Gates

Ultralow Turnoff Loss Dual-Gate SOI LIGBT with Trench Gate Barrier and Carrier Stored Layer

Small-sized Silicon-on-insulator Lateral Insulated Gate Bipolar Transistor for Larger Forward Bias Safe Operating Area and Lower Turnoff Energy

An Ultralow Loss Reverse-Conducting LIGBT with Embedded P-P-N Diode in Oxide Trench

An L-Shaped Low On-Resistance Current Path Soi Ldmos with Dielectric Field Enhancement