A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
Xiaorong Luo,Yang Yang,Tao Sun,Jie Wei,Diao Fan,Dongfa Ouyang,Gaoqiang Deng,Yonghui Yang,Bo Zhang,Zhaoji Li
DOI: https://doi.org/10.1109/TED.2019.2892068
IF: 3.1
2019-01-01
IEEE Transactions on Electron Devices
Abstract:A novel 600-V snapback-free and low-loss shorted-anode (SA) silicon on insulator lateral insulated gate bipolar transistor (LIGBT) with self-adaptive resistance (SAR) in anode is proposed and investigated by simulation, named SAR LIGBT. The device is characterized by dual anode trenches which are filled with p-type polysilicon and surrounded by oxide, and the dual trenches are shorted with the anode electrode, separated by the low-doped N− region and N+ anode region. At low anode voltage (
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), the N− region is fully depleted by p-type polysilicon, serving as a large resistance to hinder electrons flowing into the N+ anode; at high VA, an electron accumulation layer is formed along the anode trenches to provide a low-resistance path for electron current. Consequently, N− region makes the distributed resistances at the anode side (
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) act as a SAR. It not only eliminates the snapback effect but also reduces on-state voltage drop (
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) and turn-off energy loss (
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). Therefore, SAR LIGBT achieves a better tradeoff between
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and
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. At the same
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, the SAR LIGBT reduces the
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by 20.6%, 28.1%, and 30.5% compared with those of multisegment anode, segmented trenches in the anode, and SA-NPN LIGBTs, respectively. Moreover, the SAR LIGBT exhibits the lowest
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of 1.71 V and the shortest switching time of 93 ns at
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A/cm
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. In addition, the SAR LIGBT achieves snapback-free with smaller cell pitch than that of separated SA LIGBT.