Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor with Double Deep P-Regions
Kaiwei Dai,Jie Wei,Quan Zhou,Kemeng Yang,Jinlong Lu,Xindi Liu,Zhaoji Li,Bo Zhang,Xiaorong Luo
DOI: https://doi.org/10.1109/ted.2024.3478170
IF: 3.1
2024-01-01
IEEE Transactions on Electron Devices
Abstract:A novel low turn-off loss high-speed silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) featuring a self-adapted parasitic thyristor is proposed and investigated. The parasitic thyristor is introduced by inserting double deep P-regions (DDP) between the N-drift and an n-type carrier-stored layer (NCS). In the on-state with low anode voltage ( VA ), the thyristor is easily triggered as the sum of current gains of parasitic transistors (P-anode/N-drift/P-regions and N-drift/P-regions/NCS) equals one, then the DDP LIGBT could enter the bipolar conduction state and achieve low on-state voltage ( V-on ). As the VA increases, the nMOS of DDP LIGBT enters saturation. The electron injection of DDP LIGBT is suppressed by the saturation characteristic of the nMOS. Thus, the saturation current value is similar to that of Con. LIGBT. More importantly, during the turning-off period, not only the on-state parasitic transistor at low V-A but also the high electric field around the deep P-regions/N-drift junction under high V-A accelerates the extraction of excess carriers and shortens the turn-off time. Therefore, both the turn-off time and the turn-off loss (E-off ) are obviously decreased. For the short-circuit state, the DDP LIGBT transfers the high-temperature point from the current crowding cathode side to the anode side, optimizing heat distribution and extending short-circuit time. Compared with Con. LIGBT at J(A)= 100 A/cm (2) , the DDP LIGBT not only decreases the E-off /V-on by 82%/20% at the same V-off /E-on , but also improves the short-circuit withstanding time by 67%.