Abstract:A snapback-free and high-performance trench gate reverse conducting (RC) lateral insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) is proposed. With an integrated Schockley diode, the RC and snapback-free forward conducting are accomplished. With a self-adaptive trench gate nMOS, fast and soft reverse recovery as well as low peak forward recovery voltage ( ${V}_{\text {FRM}}{)}$ is achieved for the diode mode, and low turn-off loss ( ${E}_{\text {off}}{)}$ is achieved for the lateral insulated gate bipolar transistor (LIGBT) mode. With a self-adaptive planar gate nMOS, the forward ON-state voltage drop ( $\left(V_{\mathrm{CE}(s a t)}\right)$ can be reduced. By using a deep trench with p-ring (DTP), high dynamic avalanche immunity (DAI) is obtained. The trench gate DAI LIGBT combined with a p-i-n diode with a DPT (DTP p-i-n diode) is used for comparison, where the total area of the proposed RC-IGBT is reduced by 42%. Simulation results show that the proposed RC-LIGBT can safely turn off under 100% breakdown voltage and reduce ${E}_{\text {off}}$ by 60% compared to the DAI LIGBT. The reverse recovery charge ( ${Q}_{\text {rr}}{)}$ of the proposed RC-LIGBT is 38% of the DTP p-i-n diode and 19% of the conventional p-i-n diode. The reverse recovery softness ( ${S}{)}$ is increased to 1.05 compared to the DTP p-i-n diode ( ${S}$ = 0.14) and the conventional p-i-n diode ( ${S}$ = 0.11).

Snapback-Free And Low-Loss Sag-Ligbt With Self-Driving Auxiliary Gate

CMOS Compatible Shorted Anode Auxiliary Cathode Lateral Insulated Gate Bipolar Transistors

A Snapback-Free and Low-Loss RC-LIGBT With Integrated Double Self-Biased nMOS

Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability

A Snapback-Free Shorted-Anode Insulated Gate Bipolar Transistor with an N-path Structure

A Study of Fast Switching, Anode Shorted Lateral Insulated Gate Bipolar Transistor

A Snapback-Free and High-Performance Trench Gate Reverse-Conducting SOI-LIGBT With Self-Adaptive nMOS

A Novel Dual-Channel Soi Ligbt with Improved Reliability

A Snapback-Free and Reverse Conducting SOI-LIGBT with Self-Adaptive Electron Barriers

Lateral IGBT in thin SOI process for high voltage ESD application

Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

800V Lateral IGBT in Bulk Si for Low Power Compact SMPS Applications

A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

Low Switching Loss and EMI Noise IGBT With Self-Adaptive Hole-Extracting Path

High-Current and Short-Circuit Capability SOI-LIGBT With Double-Integrated Self-Adapted MOS-Resistors

Performance of 200 V Cmos Compatible Auxiliary Cathode Lateral Insulated Gate Transistors

Dual trench gates SOI LIGBT with low conduction loss

A novel dual gated lateral MOS-bipolar power device

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor

A Low Loss Soi Lateral Trench Igbt and Superjunction Device with Insulated Trench Barrier