Abstract:Ferroelectric domain-wall random access memory (DWRAM), based on the utilization of highly conductive domain walls in insulating ferroelectric LiNbO 3 (LNO) single-crystal thin films, holds great promise for the future of memory storage. The ability to scale this technology up in a crossbar architecture means that it has the otential to surpass the storage density capabilities of commercial ferroelectric random access memory devices. Nevertheless, the passivation layer in the vertically integrated structure (VIS) architecture is critical because it affects many vital parameters of the memory such as retention, on/off current ratio, reliability, etc. Therefore, a detailed strain investigation of silicon nitride and silicon dioxide fabricated by plasma-enhanced chemical vapor deposition (PECVD) is presented. Furthermore, the effect of residual strain on the electrical properties of LNO DW cells was investigated. The results indicated that a monolayer of SiO 2 or Si 3 N 4 is not a good choice for the insulating layer because of the undesirable passivation caused by defects and residual strain. Hence, a Si 3 N 4 /SiO 2 composite passivation layer is proposed, which not only solves the residual strain problem but also ensures good insulation performance. Finally, a crossbar array of DW memory cells with an on/off current ratio greater than 10 4 was fabricated using the Si 3 N 4 /SiO 2 composite dielectric layer, demonstrating good uniformity and retention. This work validates the feasibility of high-density integration of LNO domain wall memories and provides a foundation for selecting passivation layers in the VIS architecture.

Investigation and Solution of Low Yield Problem for Phase Change Memory with Lateral Fully-Confined Structure

300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Constraints and Resolution for Phase Change Materials and Memory Device Scaling

Some Solutions for Writing Current Reduction and High Density Application of Phase Change Memory

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

Interface Engineering to Enhance Phase Change Memory Programmability

Exploit Imbalanced Cell Writes to Mitigate Write Disturbance in Dense Phase Change Memory

Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory

Investigation of Nano-Phase Change for Phase Change Random Access Memory

Current Density Enhancement Nano-Contact Phase-Change Memory for Low Writing Current

A Software-hardware Collaborating Framework for Wear Leveling on Phase Change Memory

Strain investigation of PECVD passivation layer for ferroelectric domain wall random access memory

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation

Plastic Deformation and Failure Analysis of Phase Change Random Access Memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium