Abstract:Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is related to the low pyrolysis efficiency of NH3, which represents one of the fundamental challenges hindering the development of high purity thick GaN for vertical high power device applications. This work uses a laser-assisted MOCVD (LA-MOCVD) growth technique to address the high-C issue in MOCVD GaN. Carbon dioxide (CO2) laser with wavelength of 9.219 um was utilized to facilitate NH3 decomposition via resonant vibrational excitation. The LA-MOCVD GaN growth rate (as high as 10 um/hr) shows a strong linear relationship with the trimethylgallium (TMGa) flow rate, indicating high effective V/III ratios and hence efficient NH3 decomposition. Pits-free surface morphology of LA-MOCVD GaN was demonstrated for films with growth rate as high as 8.5 um/hr. The background [C] in LA-MOCVD GaN films decreases monotonically as the laser power increases. A low [C] at 5.5E15 cm-3 was achieved in LA-MOCVD GaN film grown with the growth rate of 4 um/hr. Charge transport characterization of LA-MOCVD GaN films reveals high crystalline quality with room temperature mobility >1000 cm2/Vs. LA-MOCVD growth technique provides an enabling route to achieve high quality GaN epitaxy with low-C impurity and fast growth rate simultaneously. This technique can also be extended for epitaxy of other nitride-based semiconductors.

Species Transport and Chemical Reaction in a MOCVD Reactor and Their Influence on the GaN Growth Uniformity

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

Effect of Carrier Gas Flow Rate on In2O3 Nanostructure Morphology and Growth Mechanism

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Effects of Thermal Convection on Growth Rate of GaN by MOVPE

High Uniform Growth of 4-Inch GaN Wafer Via Flow Field Optimization by HVPE

High Quality and Uniformity Gan Grown on 150 Mm Si Substrate Using In-Situ Nh3 Pulse Flow Cleaning Process

The Chemistry of GaN Growth

Kinetic Monte Carlo Study Of Metal Organic Chemical Vapor Deposition Growth Dynamics Of Gan Thin Film At Microscopic Level

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Highly Uniform Growth of 2-Inch GaN Wafers with a Multi-Wafer HVPE System

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

Selection of Gallium Growth by MOCVD

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film