Abstract:In the modeling of the reaction-transport process in GaN MOVPE growth, the selections of kinetic parameters (activation energy Ea and pre-exponential factor A) for gas reactions are quite uncertain, which cause uncertainties in both gas reaction path and growth rate. In this study, numerical modeling of the reaction-transport process for GaN MOVPE growth in a vertical rotating disk reactor is conducted with varying kinetic parameters for main reaction paths. By comparisons of the molar concentrations of major Ga-containing species and the growth rates, the effects of kinetic parameters on gas reaction paths are determined. The results show that, depending on the values of the kinetic parameters, the gas reaction path may be dominated either by adduct/amide formation path, or by TMG pyrolysis path, or by both. Although the reaction path varies with different kinetic parameters, the predicted growth rates change only slightly because the total transport rate of Ga-containing species to the substrate changes slightly with reaction paths. This explains why previous authors using different chemical models predicted growth rates close to the experiment values. By varying the pre-exponential factor for the amide trimerization, it is found that the more trimers are formed, the lower the growth rates are than the experimental value, which indicates that trimers are poor growth precursors, because of thermal diffusion effect caused by high temperature gradient. The effective order for the contribution of major species to growth rate is found as: pyrolysis species>amides>trimers. The study also shows that radical reactions have little effect on gas reaction path because of the generation and depletion of H radicals in the chain reactions when NH2 is considered as the end species.

Effects of Thermal Convection on Growth Rate of GaN by MOVPE

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

The Dependence of Growth Rate of GaN Buffer Layer on Growth Parameters by Metalorganic Vapor-Phase Epitaxy

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

The Dependence of Gan Growth Rate on Electron Temperature in an Ecr Plasma

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer

Numerical Study Of Transport And Reaction Phenomena In Gan Vapor Phase Epitaxy

Effects of Reaction-Kinetic Parameters on Modeling Reaction Pathways in GaN MOVPE Growth

Numerical simulation of temperature gradient effects on gallium nitride crystal growth by sodium-flux method

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

Simulation of growing GaN in vertical HVPE reactor