Abstract:Phosphorus doped Si nanocrystals (SNCs) emebedded in silicon-rich SiNx:H films were prepared using plasma enhanced chemical vapor deposition technique, and the effects of nitrogen incorporation on the microstructure and electronic properties of the thin films have been systematically studied. Transmission electron microscope and Raman observation revealed that nitrogen incorporation prevents the growth of Si nanocrystals, and that their sizes can be adjusted by varying the flow rate of NH3. The reduction of photoluminescence (PL) intensity in the range of 2.1-2.6 eV of photon energy was observed with increasing nitrogen impurity, and a maximal PL intensity in the range 1.6-2.0 eV was obtained when the incorporation flow ratio NH3/(SiH4+H-2+PH3) was 0.02. The conductivity of the films is improved by means of proper nitrogen impurity doping, and proper doping causes the interface charge density of the heterojunction (H-J)device to be lower than the nc-Si:H/c-Si H-J device. As a result, the proper incorporation of nitrogen could not only reduce the silicon banding bond density, but also fill some carrier capture centers, and suppress the nonradiative recombination of electrons. (C) 2016 Elsevier Ltd. All rights reserved.

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

Nmr Spin Lattice Relaxation in Nitrogen-Doped 6h Silicon Carbide

Phosphorus ionization in silicon doped by self-assembled macromolecular monolayers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Effects of Nitrogen Impurities on the Microstructure and Electronic Properties of P-Doped Si Nanocrystals Emebedded in Silicon-Rich Sinx Films

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Silicon and Silicon-Nitrogen Impurities in Graphene: Structure, Energetics, and Effects on Electronic Transport

Controllable Nitrogen Doping in Multicrystalline Silicon by Casting under Low Cost Ambient Nitrogen

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Deep Level Transient Spectroscopic Investigation of Phosphorus-Doped Silicon by Self-Assembled Molecular Monolayers

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Dopant Activation and Photoresponses of Boron-Doped Silicon by Self-Assembled Molecular Monolayers

Nitrogen Effects on Thermal Donor and Shallow Thermal Donor in Silicon

De-carbonization of Self-Assembled Molecular Monolayers Doping in Silicon

Nitrogen in silicon for room temperature single-electron tunneling devices