Abstract:Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deterministic placement of single dopants. However, dopant segregation, diffusion, surface roughening, and defect formation during the encapsulation overgrowth introduce large uncertainties to the exact dopant placement and activation ratio. In this study, we develop a unique method by combining dopant segregation/diffusion models with sputter profiling simulation to monitor and control, at the atomic scale, dopant movement using room-temperature grown locking layers (LL). We explore the impact of LL growth rate, thickness, rapid thermal anneal, surface accumulation, and growth front roughness on dopant confinement, local crystalline quality, and electrical activation within Si:P 2-D systems. We demonstrate that dopant movement can be more efficiently suppressed by increasing the LL growth rate than by increasing LL thickness. We find that the dopant segregation length can be suppressed below a single Si lattice constant by increasing LL growth rates at room temperature while maintaining epitaxy. Although dopant diffusivity within the LL is found to remain high even below the hydrogen desorption temperature, we demonstrate that exceptionally sharp dopant confinement with high electrical quality within Si:P monolayers can be achieved by combining a high LL growth rate with a low-temperature LL rapid thermal anneal.

Phosphorus ionization in silicon doped by self-assembled macromolecular monolayers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe <sub>2</sub> Monolayer (Adv. Electron. Mater. 1/2020)

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Full Activation of Dopants by Carbon-free Self-Assembled Molecular Monolayer Doping

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

High Phosphorus Doping of Epitaxial Silicon at Low Temperature and Very Low Pressure

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Donor incomplete ionization and mobility enhancement in ultra-thin silicon-on-insulator films doped by phosphorus end-terminated polymers

Phosphorus doping of ultra-small silicon nanocrystals

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers