Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

Dopant Activation and Photoresponses of Boron-Doped Silicon by Self-Assembled Molecular Monolayers

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Doping silicon nanocrystals with boron and phosphorus

Phosphorus ionization in silicon doped by self-assembled macromolecular monolayers

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Deep Level Transient Spectroscopic Investigation of Phosphorus-Doped Silicon by Self-Assembled Molecular Monolayers

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Full Activation of Dopants by Carbon-free Self-Assembled Molecular Monolayer Doping

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

The Phosphorus and Boron Co-Doping Behaviors at Nanoscale in Si Nanocrystals/Sio2 Multilayers

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon