Abstract:A controllable self-assembled growth using molecular beam epitaxy (MBE) of dense, uniform, and high-aspect-ratio InGaN nanorods (NRs) is achieved through regulating the Ga/In flux ratio and employing high Miller index planes of patterned sapphire substrates (PSSs). It is clearly demonstrated that both the low Ga/In flux ratio and high Miller index plane of PSS patterns facilitate the three-dimensional growth mode for InGaN NRs and simultaneously suppress NR coalescence. A lower Ga/In flux ratio favors a higher density, a larger aspect ratio, and a smaller coalescence degree of InGaN NRs through enhancing axial growth and inversely suppressing radial growth. The specific surface structures of high Miller index planes, e.g., the well-organized step-terrace and irregular bulge structures, critically affect the morphology, dimensions, density, and crystallographic orientation of MBE self-assembled NRs. In particular, the narrow and ordered step-terrace structure in the C3-plane-(4 5[combining macron] 1 38) plane-on a hexagonal pyramid favors the highest density, largest aspect ratio, and best uniformity of semipolar InGaN NRs, thus contributing to optimal photoluminescence performance. A thorough understanding of the mechanism of the effect of the Ga/In flux ratio and crystallographic plane on the MBE self-assembled growth behaviour of InGaN NRs was gained through experimental and theoretical exploration. This work contributes towards a deep understanding of the MBE self-assembled growth mechanism and controllable fabrication of dense, well-separated, and uniform InGaN NRs, thus contributing to the enhanced performance of NR-based optoelectronic devices.

Growth Mode of Nitride Semiconductors on Nano‐patterned Sapphire Substrates by Molecular Beam Epitaxy

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Crystallographic Plane and Topography-Dependent Growth of Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Epitaxial Growth and Interfaces of High-Quality InN Films Grown on Nitrided Sapphire Substrates

Insight into the Ga/In Flux Ratio and Crystallographic Plane Dependence of MBE Self-Assembled Growth of InGaN Nanorods on Patterned Sapphire Substrates

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Epitaxial Growth of Ⅲ Nitrides and Relevant Devices on Metal-Based Substrates

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Nucleation Mechanism for Epitaxial Growth of GaN on Patterned Sapphire Substrates

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Step-edge-guided Nucleation and Growth Mode Transition of Α-Ga2o3 Heteroepitaxy on Vicinal Sapphire