Effects of Process Parameters on Glass-Si Microstructure Encapsulation Bonding Quality

li jia,guo hao,guo zhiping,miao shujing,wang jingxiang
DOI: https://doi.org/10.3969/j.issn.1002-1841.2015.10.002
2015-01-01
Abstract:Based on the MEMS packaging test platform,the process parameters such as bonding temperature,bonding time and test silicon wafer specifications etc were studied in this paper. Through changing the bonding temperature,bonding time and test silicon wafer specifications etc,the Glass-Si bonding contrast test was made. Through calculating the bonding void fraction of each comparison test. the void fraction data of each group comparison were analyzed and the effect of bonding quality factors was summarized and the optimum effect of bonding temperature was summarized. Experimental results indicate that when the bonding voltage is1200 V,bonding temperature is from 445 ℃ to 455 ℃,the bonding time is 60 s,and the void fraction is less than 5%,bonding quality of glass and silicon wafer can achieve the best,thus providing important basis for the glass silicon bonding quality.
What problem does this paper attempt to address?