Structure and Electric Conduction in Pulsed Laser-Deposited ZnO Thin Films Individually Doped with N, P, or Na

D. L. Jiao,X. C. Zhong,W. Q. Qiu,H. Zhang,Z. W. Liu,G. Q. Zhang
DOI: https://doi.org/10.1007/s11664-018-6196-7
IF: 2.1
2018-01-01
Journal of Electronic Materials
Abstract:N-, P-, and Na-doped ZnO films with c-axis orientation were produced by pulsed laser deposition using N2O or O-2 as the reaction gas. The effects of deposition temperature and deposition pressure on the lattice structure, morphology, and electric conduction have been investigated. High gas pressure leads to large-sized grains with large grain barriers, which cause a reduced mobility. P acts as an acceptor and the number of compensating defects in the P-doped film is reduced under high O-2 pressure. Na also acts as an acceptor, and the effects of high temperature on Na-doped films are encouraging as the solubility of the dopant is high. However, high temperature may cause less incorporation of N and P in the film. In the present work, p-type conduction has not been obtained in N- and P-doped films despite a wide range of processing parameters employed. Na-doped films display an increasing trend towards p-type films at high temperatures and high O-2 pressures. These results provide an insight on how these dopants behave in ZnO films and indicate that the careful selection of the deposition conditions is necessary in order to obtain p-type films by pulsed laser deposition.
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