Effects of V 2 O 5 addition on the phase-structure and dielectric properties of zinc titanate ceramics

Xiangchun Liu,Feng Gao,Lili Zhao,Ming Zhao,Changsheng Tian
DOI: https://doi.org/10.1007/s10832-007-9013-x
2007-01-01
Journal of Electroceramics
Abstract:V 2 O 5 -doped zinc titanate ceramics (ZnTiO 3 ) were prepared by conventional mixed-oxide method combined with a semi-chemical processing. The effects of V 2 O 5 addition on the phase-structures and the dielectric properties of ZnTiO 3 ceramics were investigated. The results show the sintering temperature of zinc titanate ceramics could be lowered from 1,150 to 930 °C by reducing the size of starting powders using a semi-chemical processing; and with adding V 2 O 5 addition, the densification temperature of ZnTiO 3 ceramics could be reduced to 875 °C. Also the phase transition temperature from hexagonal ZnTiO 3 phase to cubic Zn 2 TiO 4 was lowered by adding V 2 O 5 . The best properties were: ɛ r = 20.6, Q × f = 8,873 GHz , when the ceramics was sintered at 900 °C, which is a promising candidate in the field of multi-layer devices requiring low sintering temperature (≤900 °C).
What problem does this paper attempt to address?